Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the device
First Claim
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1. A method for fabricating a semiconductor device, comprising steps of:
- providing a buffer layer on a substrate;
forming a first semiconductor layer on a surface of said buffer layer;
doping dopant into said first semiconductor layer to form an intermediate layer on a surface of said first semiconductor layer in an epitaxial process;
covering a second semiconductor layer on a surface of said intermediate layer, wherein said step of forming said intermediate layer and said step of covering said second semiconductor layer on said surface of said intermediate layer are regarded as a procedure; and
forming a semiconductor light emitting device on said second semiconductor layer;
wherein the dopant in said intermediate layer is one of Be, Mg, Ca, Sr, Ba, Zn, Cd, Hg, Si, Ge, and Sn, or the mixture thereof and wherein a doping concentration of said Mg in said intermediate layer is between 1.0×
1020 cm−
3 and 9.9×
1022 cm−
3; and
wherein a doping concentration of the mixture of said Mg and said Si in said intermediate layer ranges from 1.0×
1020 cm−
3 and 5.0×
1021 cm−
3.
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Abstract
A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.
16 Citations
9 Claims
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1. A method for fabricating a semiconductor device, comprising steps of:
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providing a buffer layer on a substrate; forming a first semiconductor layer on a surface of said buffer layer; doping dopant into said first semiconductor layer to form an intermediate layer on a surface of said first semiconductor layer in an epitaxial process; covering a second semiconductor layer on a surface of said intermediate layer, wherein said step of forming said intermediate layer and said step of covering said second semiconductor layer on said surface of said intermediate layer are regarded as a procedure; and forming a semiconductor light emitting device on said second semiconductor layer; wherein the dopant in said intermediate layer is one of Be, Mg, Ca, Sr, Ba, Zn, Cd, Hg, Si, Ge, and Sn, or the mixture thereof and wherein a doping concentration of said Mg in said intermediate layer is between 1.0×
1020 cm−
3 and 9.9×
1022 cm−
3; andwherein a doping concentration of the mixture of said Mg and said Si in said intermediate layer ranges from 1.0×
1020 cm−
3 and 5.0×
1021 cm−
3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Current AssigneeAdvanced Optoelectronic Technology, Inc.
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Original AssigneeAdvanced Optoelectronic Technology, Inc.
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InventorsYeh, Ying Chao, Huang, Shih Cheng, Tu, Po Min, Lin, Wen Yu, Wu, Peng Yi, Chan, Shih Hsiung
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Primary Examiner(s)MITCHELL, JAMES M
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Application NumberUS12/488,875Publication NumberTime in Patent Office1,093 DaysField of Search438/47, 438/94, 438/172US Class Current438/47CPC Class CodesH01L 21/02458 NitridesH01L 21/02505 consisting of more than two...H01L 21/0254 NitridesH01L 21/02656 Special treatmentsH01L 33/007 comprising nitride compoundsH01S 2301/173 The laser chip comprising s...H01S 2304/12 Pendeo epitaxial lateral ov...H01S 5/32341 blue laser based on GaN or GaP
