Electrically enhanced wirebond package

• US 8,203,219 B2
• Filed: 03/23/2007
• Issued: 06/19/2012
• Est. Priority Date: 03/23/2006
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wyland, Chris
• Primary Examiner(s): Parekh, Nitin
• Application Number:
  US12/294,211
• Publication Number:
  US 20090102067A1
• Time in Patent Office: 1,915 Days
• Field of Search: 257/784, 257/787, 257/E23.024, 257/780, 257/666
• US Class Current: 257/784
• CPC Class Codes: H01L 2223/6611 Wire connections
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/371 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/37124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/37139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/37144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/37155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/40225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/4556 Disposition, e.g. coating on a part of the core
• CPC Class Codes: H01L 2224/45565 Single coating layer
• CPC Class Codes: H01L 2224/4569 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/484 Connecting portions
• CPC Class Codes: H01L 2224/48599 Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/48699 Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
• CPC Class Codes: H01L 2224/4903 : Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49051 : Connectors having different shapes
• CPC Class Codes: H01L 2224/49175 : Parallel arrangements
• CPC Class Codes: H01L 2224/73221 : Strap and wire connectors
• CPC Class Codes: H01L 2224/73277 : Wire and HDI connectors
• CPC Class Codes: H01L 2224/85399 : Material
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/3135 : Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/49517 : Additional leads
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49558 : Insulating layers on lead frames, e.g. bridging members
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/5389 : the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/41 : of a plurality of strap connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/91 : Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

Consistent with an example embodiment, there is an integrated circuit (IC) device in a packaging having electrically insulated connections. The IC device comprises a semiconductor device (100) mounted onto a die attachment area (10); the semiconductor device has a plurality of bonding pads (20a, 25a, 30a, 35a). A lead frame having a plurality of bonding fingers (20b, 25b, 30b, 35b) surrounds the die attachment area. A plurality of mutually isolated connection conductors (25d, 30d, 40, 50) having respective first ends are attached to respective bonding pads on the semiconductor device and the plurality of mutually isolated connection conductors having respective second respective second ends are attached to respective bonding fingers of the lead frame. An insulating material (45) coats at least a portion of the plurality of mutually isolated connection conductors. The mutually isolated connection conductors may include a bond wire (40, 50) for the signal connection and a conductive strap (25d, 30d) for the voltage reference connection. The insulating material (45) coating the bond wires reduces the likelihood of short circuits during encapsulation.

Claims

1. An integrated circuit (IC) device in packaging having electrically insulated connections, comprising:

a semiconductor device mounted onto an attachment area, the semiconductor device having a plurality of bonding pads;

a lead frame surrounding the die attachment area, the lead frame having a plurality of bonding fingers;

a plurality of mutually isolated connection conductors having respective first ends attached to respective bonding pads on the semiconductor device and having respective second respective second ends attached to respective bonding fingers of the lead frame, wherein the plurality of mutually isolated connection conductors includes a bond wire coated with an insulating coating and a conductive strap surrounded by a dam of insulating material such that the dam of insulating material separates the conductive strap from the bond wire.

2. The IC device as recited in claim 1, further including a passivation envelope encapsulating the semiconductor device, mutually isolated connection conductors, and bonding fingers of the lead frame.

3. The IC device as recited in claim 2, wherein the plurality of mutually isolated connection conductors are of two types:

a signal connection and a voltage reference connection.

4. The IC device as recited in claim 2, wherein the signal connection is a bond wire coated with an insulating coating.

5. The IC device as recited in claim 2, wherein the voltage reference connection is a conductive strap surrounded by dams of insulating material.

6. The IC device as recited in claim 5, wherein the conductive strap is at least one of the following:

copper, aluminum, gold, silver, nickel, solder, plastic with conductive filler.

7. An integrated circuit (IC) device in a BGA package substrate, the BGA package substrate having electrically insulated connections, comprising:

a semiconductor device mounted onto an attachment area, the semiconductor device having bonding pads, wherein the bonding pads includes a first bonding pad encapsulated by a first insulating material and a second bonding pad unencapsulated by the first insulating material;

bonding fingers surrounding the die attachment area;

a plurality of mutually isolated connection conductors having respective first ends attached to respective bonding pads on the semiconductor device and having respective second ends attached to respective bonding fingers, wherein the plurality of mutually isolated connection conductors includes a first and second isolated connection conductors, wherein the first end of the first isolated connection conductor is attached to the first bonding pad encapsulated by the first insulating material and the first end of the second isolated connection conductor is attached to the bonding pad unencapsulated by the first insulating material, and

a second insulating material coating at least a portion of one of the first and second isolated connection conductors.

8. The IC device as recited in claim 7, wherein the plurality of mutually isolated connection conductors are of two types:

a signal connection and a voltage reference connection.

9. The IC device as recited in claim 8, wherein the voltage reference connection is a conductive strap defined in the package substrate, the conductive strap surrounded by insulating material;

and wherein the signal connection is a bond wire coated with an insulating material.

10. The IC device of claim 7, further comprising a dam of insulating material positioned between the first and second isolated connection conductors to electrically isolate the first and second isolated connection conductors from each other.

11. The IC device of claim 10, further comprising a passivation envelope over and encapsulating the first and second bonding pads and the first and second isolated connection conductors.

12. The IC device of claim 7, wherein the first isolated connection conductor is a bond wire coated with the second insulating material and wherein the second isolated connection conductor is a conductive strap.

13. The IC device of claim 7, further comprising a dam of insulating material positioned between the conductive strap and the bond wire to electrically isolate the conductive strap from the bond wire.

14. The IC device of claim 7, wherein the second insulating material is different than the first insulating material.

15. An integrated circuit (IC) device in a package substrate, the package substrate having electrically insulated connections, comprising:

a semiconductor device mounted onto an attachment area, the semiconductor device having bonding pads;

bonding fingers surrounding the die attachment area;

signal connection conductors having respective first ends attached to respective bonding pads on the semiconductor device and having respective second ends attached to respective bonding fingers, wherein a number of the signal connection conductors are bond wires coated with a resilient insulating coating;

voltage reference conductors having respective first ends attached to respective bonding pads on the semiconductor device and having respective second ends attached to respective bonding finger, wherein a number of the voltage reference conductors are conductive straps surrounded by dams of insulating material; and

a passivation envelope encapsulating the semiconductor device, signal connection conductors, voltage reference conductors, and bonding fingers on the substrate.

16. The IC device as recited in claim 15, wherein bond wires coated with the resilient insulating coating where attached at their respective first ends and second ends are sealed with additional resilient insulating coating.

17. The IC device as recited in claim 16, wherein the package substrate is a ball grid array (BGA).

18. The IC device as recited in claim 16, wherein the resilient coating of the bond wires is selected from at least one of the following:

parylene, epoxy, or a polycarbonate.

19. The IC device as recited in claim 16, wherein the insulating material of the dams is selected from at least one of the following:

substrate material, solder mask.

20. The IC device as recited in claim 16, wherein the conductive straps are of conductive material selected from at least one of the following:

copper, gold, silver, aluminum, nickel, conductive polymer, plastics having conductive fillers of aluminum, copper, silver, nickel, and carbon nanotubes.