Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer

• US 8,204,296 B2
• Filed: 09/14/2010
• Issued: 06/19/2012
• Est. Priority Date: 07/20/2007
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Bhaskar, Kris, McCord, Mark, Bhattacharyya, Santosh, Liang, Ardis, Wallingford, Richard, Altendorfer, Hubert, Maayah, Kais
• Primary Examiner(s): Koziol, Stephen R
• Application Number:
  US12/881,669
• Publication Number:
  US 20100329540A1
• Time in Patent Office: 644 Days
• Field of Search: 382/103, 382/115, 382/145
• US Class Current: 382/145
• CPC Class Codes: G01N 21/93 Detection standards; Calibrating baseline adjustment, drift correction
• CPC Class Codes: G01N 21/95607 using a comparative method
• CPC Class Codes: G03F 1/84 Inspecting
• CPC Class Codes: G03F 7/7065 Defects, e.g. optical inspection of patterned layer for defects
• CPC Class Codes: G06T 2207/30148 Semiconductor; IC; Wafer
• CPC Class Codes: G06T 7/001 using an image reference approach

Abstract

Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the one or more dies based on within die positions of the output. In addition, the method includes generating the standard reference die based on results of the combining step.

Claims

1. A computer-implemented method for detecting defects on a wafer, comprising:

combining multiple images of a structure formed on the wafer to generate a composite image of the structure, wherein the multiple images are acquired at multiple positions on the wafer at which the structure is formed, wherein the multiple images comprise gray levels, wherein said combining comprises determining a mean value and a median value of the gray levels across within die positions, and wherein the composite image comprises the mean value across the within die positions;

generating an additional composite image of the median value across the within die positions; and

comparing the composite image to a reference to detect defects on the wafer.

2. The method of claim 1, wherein the defects comprise systematic defects.

3. The method of claim 1, wherein the defects have a size that is approximately equal to line edge roughness of the structure.

4. The method of claim 1, wherein said combining further comprises averaging the multiple images.

5. The method of claim 1, wherein the multiple positions comprise positions of the structure in cells having identical designs.

6. The method of claim 1, wherein the multiple positions comprise positions of the structure in neighboring dies.

7. The method of claim 1, wherein said combining is performed such that the composite image has less line edge roughness than each of the multiple images.

8. The method of claim 1, wherein said combining is performed such that the composite image has less random variation than each of the multiple images.

9. The method of claim 1, wherein said combining is performed such that the composite image has less gray level noise than each of the multiple images.

10. The method of claim 1, wherein the reference comprises a known good image of the structure.

11. The method of claim 1, wherein the reference comprises an image of the structure acquired in a standard reference die.

12. The method of claim 1, wherein the reference comprises a reference image, a composite test image, or a reference image and a composite test image of the structure acquired in a process window qualification die.

13. The method of claim 1, wherein the reference comprises a rendered database image.

14. The method of claim 1, wherein the reference comprises a composite image of the structure generated from multiple images acquired at multiple positions on the wafer or on a different wafer.

15. A system configured to detect defects on a wafer, comprising:

an inspection system configured to acquire multiple images of a structure formed on the wafer; and

a computer system configured for;

combining the multiple images to generate a composite image of the structure, wherein the multiple images are acquired at multiple positions on the wafer at which the structure is formed, wherein the multiple images comprise gray levels, wherein said combining comprises determining a mean value and a median value of the gray levels across within die positions, and wherein the composite image comprises the mean value across the within die positions;

generating an additional composite image of the median value across the within die positions; and

comparing e composite image to a reference to detect defects on the wafer.

16. A non-transitory computer-readable medium comprising program instructions executable on a computer system for performing a computer-implemented method for detecting defects on a wafer, wherein the computer-implemented method comprises:

combining multiple images of a structure formed on the wafer to generate a composite image of the structure, wherein the multiple images are acquired at multiple positions on the wafer at which the structure is formed, wherein the multiple images comprise gray levels, wherein said combining comprises determining a mean value and a median value of the gray levels across within die positions, and wherein the composite image comprises the mean value across the within die positions;

generating an additional composite image of the median value across the within die positions; and

comparing the composite image to a reference to detect defects on the wafer.