Silicon-selective dry etch for carbon-containing films
First Claim
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1. A method of etching a silicon-and-carbon-containing layer on a surface of a substrate in a substrate processing region of a substrate processing chamber, the method comprising:
- flowing a fluorine-containing precursor and a hydrogen-containing precursor into a first remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the first remote plasma region to produce plasma effluents;
etching the silicon-and-carbon containing layer by flowing the plasma effluents and reactive oxygen into the substrate processing region while forming solid by-products on the surface of the substrate; and
after the etching step, sublimating the solid by-products by increasing a temperature of the substrate above a sublimation temperature of the solid by-products.
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Abstract
A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.
234 Citations
30 Claims
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1. A method of etching a silicon-and-carbon-containing layer on a surface of a substrate in a substrate processing region of a substrate processing chamber, the method comprising:
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flowing a fluorine-containing precursor and a hydrogen-containing precursor into a first remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the first remote plasma region to produce plasma effluents; etching the silicon-and-carbon containing layer by flowing the plasma effluents and reactive oxygen into the substrate processing region while forming solid by-products on the surface of the substrate; and after the etching step, sublimating the solid by-products by increasing a temperature of the substrate above a sublimation temperature of the solid by-products. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of etching a silicon-and-carbon-containing layer on an interior surface bordering a substrate processing region within a substrate processing system, the method comprising:
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flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the remote plasma region to produce plasma effluents; etching the silicon-and-carbon-containing layer by flowing the plasma effluents and reactive oxygen into the substrate processing region while forming solid by-products on the interior surface; and after the etching step, sublimating the solid by-products by increasing a temperature of the interior surface above a sublimation temperature of the solid by-products. - View Dependent Claims (18, 19)
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20. A method of etching a silicon-and-carbon-containing layer on a surface of a substrate in a substrate processing region, the method comprising the sequential steps of:
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flowing reactive oxygen into the substrate processing region to reduce a concentration of carbon in a near-surface region of the silicon-and-carbon-containing layer; thereafter, etching the silicon-and-carbon-containing layer by flowing a fluorine-containing precursor and a hydrogen-containing precursor into a first remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the first remote plasma region to produce plasma effluents, which are flown into the substrate processing region; and after the etching step, sublimating solid by-products left on the surface following the etching step by raising a temperature of the substrate above a sublimation temperature of the solid by-products. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification