Structures and methods for a field-reset spin-torque MRAM

• US 8,228,715 B2
• Filed: 05/28/2010
• Issued: 07/24/2012
• Est. Priority Date: 05/28/2010
• Status: Expired due to Fees

• Current Assignee: Everspin Technologies Incorporated
• Original Assignee: Everspin Technologies Incorporated
• Inventors: Andre, Thomas, Slaughter, Jon, Rizzo, Nicholas, Tehrani, Saied
• Primary Examiner(s): Mai, Son
• Application Number:
  US12/789,838
• Publication Number:
  US 20110292714A1
• Time in Patent Office: 788 Days
• Field of Search: 365/158
• US Class Current: 365/158
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1657 Word-line or row circuits
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods

Abstract

An apparatus and method of programming a spin-torque magnetoresistive memory array includes a metal reset line positioned near each of a plurality of magnetoresistive bits and configured to set the plurality of magnetoresistive memory elements to a known state by generating a magnetic field when an electrical current flows through it. A spin torque transfer current is then applied to selected ones of the magnetoresistive bits to switch the selected bit to a programmed state. In another mode of operation, a resistance of the plurality of bits is sensed prior to generating the magnetic field. The resistance is again sensed after the magnetic field is generated and the data represented by the initial state of each bit is determined from the resistance change. A spin torque transfer current is then applied only to those magnetoresistive bits having a resistance different from prior to the magnetic field being applied.

Claims

1. A method of operating a spin-torque magnetoresistive memory including a bit line coupled to each of a plurality of magnetoresistive memory elements, circuitry coupled to the bit line, and a metal reset line positioned near the plurality of magnetoresistive memory elements, the method comprising:

setting the plurality of magnetoresistive memory elements to a first state by applying a reset current through the metal reset line to apply a magnetic field to each of the plurality of magnetoresistive memory elements; and

programming selected ones of the plurality of magnetoresistive memory elements to a second state by applying a spin torque transfer current through the selected magnetoresistive memory elements from the circuitry to the bit line.

2. The method of claim 1 wherein the circuitry comprises a bipolar transistor, and applying the spin torque transfer current step comprises supplying the spin torque transfer current through the bipolar transistor to the bit line.

3. The method of claim 1 wherein the circuitry comprises a wordline and a diode coupled to the wordline, and the applying a spin torque transfer current step comprises:

applying the spin torque transfer current through the diode to the wordline.

4. The method of claim 1 wherein the magnetoresistive memory elements each comprise a magnetic tunnel junction device with a fixed magnetic region and a free magnetic region separated by a tunnel barrier.

5. The method of claim 1 further comprising applying a heating current through the bit line while applying the reset current through the metal reset line.

6. The method of claim 1 wherein an easy axis of the magnetoresistive memory elements are between 30 to 60 degrees to the magnetic field.

7. The method of claim 1 further comprising:

prior to the setting step, sensing a resistance for each of the plurality of magnetoresistive memory elements; and

subsequent to the setting step, sensing the resistance for each of the of the magnetoresistive memory elements, wherein the programming step programs only magnetoresistive memory elements having a change in resistance corresponding to a change in magnetic state subsequent to the setting step.

8. The method of claim 7 wherein the circuitry comprises a bipolar transistor, and applying the spin torque transfer current comprises supplying the spin torque transfer current through the bipolar transistor to the bit line.

9. The method of claim 7 wherein the circuitry comprises a wordline and a diode coupled to the wordline, and the applying a spin torque transfer current step comprises:

applying the spin torque transfer current through the diode to the wordline.

10. The method of claim 7 further comprising:

prior to the programming step, identifying and storing data representing the initial state of each of the magnetoresistive memory elements as determined from the change in resistance caused by the setting step; and

enabling the stored data to be read out through additional interface circuitry.

11. The method of claim 7 further comprising:

prior to the programming step, identifying and storing data representing the initial state of each of the magnetoresistive memory elements as determined from the change in resistance subsequent to the setting step; and

changing one or more of the stored data,

wherein the programming step programs the selected ones of the plurality of magnetoresistive memory elements to a second state in response to the stored data.

12. The spin-torque magnetoresistive memory of claim 11 wherein the circuitry comprises a bipolar transistor configured to supply the spin torque transfer current.

13. The spin-torque magnetoresistive memory of claim 11 wherein the circuitry comprises a diode configured to supply the spin torque transfer current.

14. The spin-torque magnetoresistive memory of claim 11 further comprising sensing circuitry configured to sense the resistance of each of the plurality of magnetoresistive memory elements.

15. The method of claim 11 wherein the step of changing of one or more of the stored data comprises:

using at least a portion of the stored data to detect errors in the stored data; and

using additional circuitry to change the stored data to correct the detected errors.

16. A spin-torque magnetoresistive memory comprising:

a plurality of magnetoresistive memory elements;

a metal reset line positioned adjacent each of the plurality of magnetoresistive memory elements and configured to set the plurality of magnetoresistive memory elements to a known state by generating a magnetic field when an electrical current of predetermined magnitude and direction flows through the metal reset line;

a bit line coupled to the plurality of magnetoresistive memory elements; and

circuitry coupled to the bit line and configured to apply a spin torque transfer current through the bit line to selected ones of the plurality of magnetoresistive memory elements.

17. The spin-torque magnetoresistive memory of claim 16 wherein the circuitry comprises a bipolar transistor configured to supply the spin torque transfer current.

18. The spin-torque magnetoresistive memory of claim 16 wherein the circuitry comprises a diode configured to supply the spin torque transfer current.

19. The spin-torque magnetoresistive memory of claim 16 further comprising sensing circuitry configured to sense the resistance change of each of the plurality of magnetoresistive memory elements corresponding to a change of magnetic state upon reset.

20. The spin-torque magnetoresistive memory of claim 19 further comprising:

storage circuitry configured to store the data represented by the magnetic states of the plurality of magnetoresistive memory elements; and

interface circuitry configured to enable the stored data to be accessed for read and write operations to the memory.

21. The spin-torque magnetoresistive memory of claim 20 further comprising:

circuitry configured to select at least one of the plurality of magnetoresistive memory elements to be programmed with a spin torque transfer current, causing the selected magnetoresistive memory element to switch from the known state to a programmed state to represent the stored data.

22. The spin-torque magnetoresistive memory of claim 16 wherein the magnetoresistive memory elements are oriented so their magnetic easy axis is at an angle within the range of 30 to 60 degrees to the magnetic field generated by the reset line.

23. The spin-torque magnetoresistive memory of claim 16 wherein in each of the magnetoresistive memory elements comprise a magnetic tunnel junction device with a fixed magnetic region and a free magnetic region separated by a tunnel barrier.

24. A method of operating a resistive memory including a bit line coupled to each of a plurality of resistive memory elements, circuitry coupled to the bit line, and a metal reset line positioned near the plurality of resistive memory elements, the method comprising:

resetting the plurality of resistive memory elements to a first state by applying a first current through the metal reset line to apply a temperature profile; and

programming selected ones of the plurality of resistive memory elements to a second state by applying a current through the selected resistive memory elements from the circuitry to the bit line.