Wafer level phosphor coating technique for warm light emitting diodes

• US 8,232,564 B2
• Filed: 10/13/2008
• Issued: 07/31/2012
• Est. Priority Date: 01/22/2007
• Status: Active Grant

• Current Assignee: Creeled Incorporated
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Chakraborty, Arpan
• Primary Examiner(s): Sandvik, Benjamin
• Assistant Examiner(s): Moore, Whitney T
• Application Number:
  US12/287,764
• Publication Number:
  US 20090057690A1
• Time in Patent Office: 1,387 Days
• Field of Search: 257/79, 257/88, 257/98, 257/E33.001, 438/28, 438/29
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Methods for wafer level fabricating of light emitting diode (LED) chips are disclosed with one embodiment of a method according to the present invention comprising providing a plurality of LEDs and then coating of the LEDs with a layer of first conversion material so that at least some light from the LEDs passes through the first conversion material. The light is converted to different wavelengths of light having a first conversion material emission spectrum. The LEDs are then coated with a layer of second conversion material arranged on the first layer of conversion. The second conversion material has a wavelength excitation spectrum, and at least some light from the LEDs passes through the second conversion material and is converted. The first conversion material emission spectrum does not substantially overlap with the second conversion material excitation spectrum. Methods according to the present invention can also be used in wafer level fabrication of LED chips and LED packages with pedestals for electrically contacting the LEDs through the conversion coatings.

Claims

1. A light emitting diode (LED) chip wafer, comprising:

a plurality of LEDs on a wafer;

a first conversion layer on at least some of said LEDs, said first conversion layer comprising a first conversion material having an associated emission spectrum;

a second conversion layer comprising a second conversion material having an associated excitation spectrum and arranged on said first conversion layer, said second conversion material being different than said first conversion material, wherein said first conversion material emission spectrum does not substantially overlap with said second conversion material excitation spectrum; and

a plurality of pedestals, each of which is in electrical contact with one of said plurality of LEDs, at least some of said pedestals extending through said first and second conversion layers and exposed at the top surface of said layers.

2. The LED chip wafer of claim 1, wherein electrical contact is made to said LED chips through said pedestals.

3. A light emitting diode (LED) chip, comprising:

an LED;

a pedestal in electrical contact with said LED;

a layer of first conversion material on said LED, said layer of first conversion material having an associated emission spectrum; and

a layer of second conversion material on said layer of first conversion material, said second conversion material being different than said first conversion material and having an associated excitation spectrum, wherein said first conversion material emission spectrum does not substantially overlap with said second conversion material excitation spectrum, wherein said pedestal is configured to provide electrical connection to said LED.

4. The LED chip of claim 3, wherein said pedestal extends through and to the surface of said coatings.

5. The LED chip of claim 3, wherein said LED is on a substrate.

6. The LED chip of claim 3, wherein LED light is converted by said first conversion material into an emission spectrum.

7. The LED chip of claim 3, wherein said LED light is converted by said first conversion material according to said associated emission spectrum, and said second conversion material having said associated excitation spectrum, wherein said emission spectrum does not overlap with said excitation spectrum.

8. The LED chip of claim 3, wherein electrical contact is made to said LED chips through said pedestals.

9. The LED chip of claim 3, wherein said first and second conversion materials comprise phosphors.

10. The LED chip of claim 3, wherein said first conversion material is a red phosphor and said second conversion material is a yellow phosphor.

11. The LED chip of claim 3, wherein each of said LED chips emits a combination of LED light and first and second conversion material light.

12. The LED chip of claim 3, wherein said LED chips emit white light.

13. The LED chip of claim 3 wherein said pedestal comprises one or more stud bumps.

14. The LED chip of claim 3, further comprising a spacer layer between said LEDs and said layer of first conversion material.

15. A light emitting diode (LED) package comprising:

an LED and a pedestal in electrical contact with said LED;

a coating of first conversion material on said LED, said first conversion material having an associated emission spectrum;

a coating of second conversion material on said coating of first conversion material, said second conversion material having an associated excitation spectrum, wherein said first conversion material emission spectrum does not substantially overlap with said second conversion material excitation spectrum;

a package lead in electrical connection with said pedestal; and

an encapsulation over said LED chip and electrical connection.

16. An LED package of claim 15, wherein said encapsulation comprises a hermetically sealed cover over said LED chip.

17. A light emitting diode (LED) chip wafer, comprising:

a plurality of LEDs on a wafer;

a plurality of pedestals each of which is in electrical contact with one of said LEDs;

a layer of first conversion material on at least some of said LEDs, said first conversion material having an associated emission spectrum; and

a layer of second conversion material on said layer of first conversion material, said second conversion material being different than said first conversion material and having an associated excitation spectrum, wherein said first conversion material emission spectrum does not substantially overlap with said second conversion material excitation spectrum.

18. The LED chip wafer of claim 17, wherein said first conversion material emission spectrum does not overlap with said second conversion material excitation spectrum.

19. The LED chip wafer of claim 17, wherein said first conversion material comprises a red phosphor and said second conversion material comprises a yellow phosphor.

20. The LED chip wafer of claim 17, wherein said first conversion material comprises a red phosphor and said second conversion material comprises a green phosphor.

21. The LED chip wafer of claim 17, wherein said first conversion material comprises a red phosphor and said second conversion material comprises a combination of yellow and green phosphors.