Method and system for tilting a substrate during gas cluster ion beam processing

• US 8,237,136 B2
• Filed: 10/08/2009
• Issued: 08/07/2012
• Est. Priority Date: 10/08/2009
• Status: Active Grant

• Current Assignee: TEL Manufacturing and Engineering of America, Inc.
• Original Assignee: TEL Epion Inc. (Tokyo Electron Limited)
• Inventors: Hautala, John J., Russell, Noel
• Primary Examiner(s): Berman, Jack
• Assistant Examiner(s): SAHU, MEENAKSHI S
• Application Number:
  US12/575,931
• Publication Number:
  US 20110084215A1
• Time in Patent Office: 1,034 Days
• Field of Search: 250/492.2, 250/492.21, 250/251, 250/288, 250/396, 250/423.R, 250/398, 250/526, 118/723.CB, 118/723.FI
• US Class Current: 250/526
• CPC Class Codes: C23C 14/221 Ion beam deposition C23C14/46, C23C14/48 take precedence
• CPC Class Codes: C23C 14/50 Substrate holders
• CPC Class Codes: H01J 2237/3174 Etching microareas
• CPC Class Codes: H01J 37/3053 for evaporating or etching
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/26566 of a cluster, e.g. using a gas cluster ion beam
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/66803 with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A method and system for treating a non-planar structure is described. The method includes forming a non-planar structure on a substrate. Additionally, the method includes generating a gas cluster ion beam (GCIB) formed from a material source for treatment of the non-planar structure, tilting the substrate relative to the GCIB, and irradiating the non-planar structure with the GCIB. The system includes a substrate tilt actuator coupled to a substrate holder and configured to tilt the substrate holder relative to a GCIB.

Claims

1. A method for preparing a non-planar structure, comprising:

providing a substrate having at least a portion of a non-planar gate structure formed thereon, wherein said portion of said non-planar gate structure comprises first surfaces that are parallel with said substrate and second surfaces that are not parallel with said substrate;

generating a gas cluster ion beam (GCIB) formed from a material source for treatment of said non-planar gate structure;

tilting said substrate relative to said GCIB to differentially treat said second surfaces relative to said first surfaces; and

irradiating said non-planar gate structure with said GCIB,

wherein said non-planar gate structure is characterized by a non-planar gate electrode layer upon formation of said gate electrode layer as part of said non-planar gate structure.

2. The method of claim 1, wherein said irradiating said non-planar gate structure with said GCIB facilitates etching at least a portion of said second surfaces on said non-planar gate structure, cleaning at least a portion of said second surfaces on said non-planar gate structure, depositing a thin film on at least a portion of said second surfaces on said non-planar gate structure, growing a thin film on at least a portion of said second surfaces on said non-planar gate structure, modifying a property of at least a portion of said second surfaces on said non-planar gate structure, doping at least a portion of said second surfaces on said non-planar gate structure, or smoothing at least a portion of said second surfaces on said non-planar gate structure, or any combination of two or more thereof.

3. The method of claim 1, wherein said irradiating said non-planar gate structure with said GCIB facilitates growing and/or depositing a layer of silicon oxide (SiO_x), silicon nitride (SiN_y), silicon carbide (SiC_z), silicon oxynitride (SiO_xN_y), silicon carbonitride (SiC_zN_y), silicon-germanium (SiGe), or germanium (Ge) on at least a portion of said second surfaces on said non-planar gate structure.

4. The method of claim 1, wherein said irradiating said non-planar gate structure with said GCIB facilitates doping at least a portion of said second surfaces on said non-planar gate structure with one or more elements selected from the group consisting of B, C, Si, Ge, N, P, As, O, S, and Cl.

5. The method of claim 1, wherein said irradiating said non-planar gate structure with said GCIB facilitates etching at least a portion of said second surfaces on said non-planar gate structure using a halogen-containing GCIB.

6. The method of claim 1, wherein said non-planar gate structure comprises first and second perpendicular surfaces associated with said non-planar gate structure and oriented substantially perpendicular to said substrate, and wherein said tilting said substrate comprises tilting said substrate such that said GCIB remains substantially parallel with a plane in which lies said first perpendicular surface and such that said GCIB establishes a non-parallel angle of incidence with said second perpendicular surface.

7. The method of claim 6, wherein said irradiating said second perpendicular surface with said GCIB facilitates etching said second perpendicular surface, cleaning said second perpendicular surface, depositing a thin film on said second perpendicular surface, growing a thin film on said second perpendicular surface, modifying a property of said second perpendicular surface, doping said second perpendicular surface, or smoothing said second perpendicular surface, or any combination of two or more thereof.

8. The method of claim 6, wherein said irradiating said second perpendicular surface with said GCIB facilitates growing and/or depositing a thin film on said second perpendicular surface while substantially avoiding growing and/or depositing another thin film on said first perpendicular surface.

9. The method of claim 6, wherein said irradiating said second perpendicular surface with said GCIB facilitates doping said second perpendicular surface while substantially avoiding doping of said first perpendicular surface.

10. The method of claim 6, wherein said irradiating said second perpendicular surface with said GCIB facilitates etching said second perpendicular surface while substantially avoiding etching of said first perpendicular surface.

11. The method of claim 6, further comprising:

selecting a beam energy, a beam energy distribution, a beam focus, and a beam dose for treating said second perpendicular surface;

accelerating said GCIB to achieve said beam energy;

focusing said GCIB to achieve said beam focus; and

irradiating said accelerated GCIB onto at least a portion of said substrate according to said beam dose.

12. The method of claim 11, further comprising:

modifying said beam energy, modifying said beam energy distribution, modifying said beam focus, modifying said beam dose, or adjusting said tilting of said substrate, or performing any combination of two or more thereof.

13. The method of claim 1, further comprising:

adjusting said tilting of said substrate from a first location of said substrate relative to said GCIB to a second location of said substrate relative to said GCIB in a continuous manner or step-wise manner.