Micro piezoresistive pressure sensor and manufacturing method thereof
First Claim
1. A micro piezoresistive pressure sensor comprising:
- a silicon substrate;
a cavity formed in a sensor region of the silicon substrate;
a membrane formed over the silicon substrate and configured to substantially enclose the cavity;
a sensitive film, including piezoresistive material, formed over the membrane; and
one or more semiconductor integrated devices which are formed in a device region of the silicon substrate,wherein the semiconductor integrated devices are complementary metal oxide semiconductor (CMOS) devices,wherein the membrane is coupled to the substrate in a CMOS process other than a bonding method, andwherein the membrane is coupled to the sensitive film in a CMOS process other than a bonding method.
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Abstract
A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.
19 Citations
22 Claims
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1. A micro piezoresistive pressure sensor comprising:
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a silicon substrate; a cavity formed in a sensor region of the silicon substrate; a membrane formed over the silicon substrate and configured to substantially enclose the cavity; a sensitive film, including piezoresistive material, formed over the membrane; and one or more semiconductor integrated devices which are formed in a device region of the silicon substrate, wherein the semiconductor integrated devices are complementary metal oxide semiconductor (CMOS) devices, wherein the membrane is coupled to the substrate in a CMOS process other than a bonding method, and wherein the membrane is coupled to the sensitive film in a CMOS process other than a bonding method. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a micro piezoresistive pressure sensor, comprising:
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forming a trench by etching a sensor region of a substrate; forming a first oxide layer to fill the trench; forming a first membrane layer over the first oxide layer and the substrate; forming a plurality of etching holes in the first membrane layer; removing the first oxide layer through the plurality of etching holes to form a cavity; filling the etching holes to form a second membrane layer, the second membrane layer being disposed over the cavity and substantially enclosing the cavity; and forming a piezoresistive film over the second membrane layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification