Surface emitting semiconductor laser
First Claim
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1. A surface emitting semiconductor laser comprising:
- a substrate;
a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers;
a cavity region that is formed on the first semiconductor multilayer reflector and is close to an active region; and
a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers,a cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector being greater than an oscillation wavelength,the cavity region including an electrically conductive region of the first conduction type in proximity to the active region, and a low refractive index region that is interposed between the electrically conductive region and the first semiconductor multilayer reflector and has a smaller refractive index than that of the electrically conductive region, anda current path region that is located in an outer circumferential part of the low refractive index region and is electrically connected to the first semiconductor multilayer reflector.
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Abstract
A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers; a cavity region that is formed on the first semiconductor multilayer reflector and includes an active region; and a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers. A cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector is greater than an oscillation wavelength.
6 Citations
13 Claims
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1. A surface emitting semiconductor laser comprising:
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a substrate; a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers; a cavity region that is formed on the first semiconductor multilayer reflector and is close to an active region; and a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers, a cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector being greater than an oscillation wavelength, the cavity region including an electrically conductive region of the first conduction type in proximity to the active region, and a low refractive index region that is interposed between the electrically conductive region and the first semiconductor multilayer reflector and has a smaller refractive index than that of the electrically conductive region, and a current path region that is located in an outer circumferential part of the low refractive index region and is electrically connected to the first semiconductor multilayer reflector. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A surface emitting semiconductor laser device comprising:
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a surface emitting semiconductor laser; and an optical component to which light emitted by the surface emitting semiconductor laser is incident, the surface emitting semiconductor laser including; a substrate; a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers; a cavity region that is formed on the first semiconductor multilayer reflector and includes an active region; and a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers, a cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector being greater than an oscillation wavelength, the cavity region including an electrically conductive region of the first conduction type in proximity to the active region, and a low refractive index region that is interposed between the electrically conductive region and the first semiconductor multilayer reflector and has a smaller refractive index than that of the electrically conductive region, and a current path region that is located in an outer circumferential part of the low refractive index region and is electrically connected to the first semiconductor multilayer reflector.
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13. An optical transmission device comprising:
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a surface emitting semiconductor device including a surface emitting semiconductor laser and an optical component to which laser emitted by the surface emitting semiconductor laser is incident; and a transmission part that transmits the light emitted from the surface emitting semiconductor laser device through an optical medium, the surface emitting semiconductor laser including; a substrate; a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers; a cavity region that is formed on the first semiconductor multilayer reflector and includes an active region; and a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers, a cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector being greater than an oscillation wavelength, the cavity region including an electrically conductive region of the first conduction type in proximity to the active region, and a low refractive index region that is interposed between the electrically conductive region and the first semiconductor multilayer reflector and has a smaller refractive index than that of the electrically conductive region a current path region that is located in an outer circumferential part of the low refractive index region and is electrically connected to the first semiconductor multilayer reflector.
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Specification
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Current AssigneeFujifilm Business Innovation Corp. (Fujifilm Holdings Corporation)
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Original AssigneeFuji Xerox Company Limited (Xerox Holdings Corp.)
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InventorsKondo, Takashi, Takeda, Kazutaka
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Primary Examiner(s)Zhang, Yuanda
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Application NumberUS12/843,361Publication NumberTime in Patent Office785 DaysField of Search372/45.01, 372/46.01, 372/46.013, 372/50.11, 372/50.124US Class Current372/50.124CPC Class CodesB82Y 20/00 Nanooptics, e.g. quantum op...H01S 5/02251 using optical fibresH01S 5/02253 using lensesH01S 5/0655 Single transverse or latera...H01S 5/1039 Details on the cavity lengthH01S 5/18313 by oxidizing at least one o...H01S 5/18358 containing spacer layers to...H01S 5/3432 the whole junction comprisi...
