Semiconductor device

  • US 8,278,763 B2
  • Filed: 09/21/2011
  • Issued: 10/02/2012
  • Est. Priority Date: 05/17/2006
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device including a multilayer wiring comprising:

  • a semiconductor substrate;

    an insulating film formed on the semiconductor substrate, at least one part of the insulating film being formed of a first insulating film and a second insulating film;

    a wiring groove and a via hole formed in the insulating film;

    a wire and a connecting plug formed from a metal respectively filled in the wiring groove and the via hole; and

    a modified layer formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and the second insulating film,wherein the first insulating film is at least one layer insulating film including a siloxane structure containing silicon, oxygen and carbon,the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms, andthe modified layer contains a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film.

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