Methods of forming patterned masks

• US 8,288,083 B2
• Filed: 11/05/2010
• Issued: 10/16/2012
• Est. Priority Date: 11/05/2010
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Zhang, Zishu, deVilliers, Anton, Carr, Robert, Good, Farrell
• Primary Examiner(s): Duda, Kathleen
• Application Number:
  US12/940,802
• Publication Number:
  US 20120115074A1
• Time in Patent Office: 711 Days
• Field of Search: 430/322, 430/323, 430/324, 430/329
• US Class Current: 430/325
• CPC Class Codes: H01L 21/02115 the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31138 by dry-etching

Abstract

Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.

Claims

1. A method of forming a patterned mask, comprising:

forming spaced-apart first features over a base, the first features comprising a first material and having sidewalls;

the first features being spaced from one another by gaps;

the first material having a reflow temperature;

forming a second material along the sidewalls of the first features;

the second material being compositionally different from the first material;

forming a third material over the second material and the first features, the third material being at a temperature above the reflow temperature of the first material as the third material is formed;

the third material being compositionally different from the second material;

the third material having a topography which defines recesses over segments of the gaps;

forming a pedestals within said recesses;

the pedestals comprising fourth material which is compositionally different from the third material;

removing some of the second material from within the gaps to pattern the second material into a plurality of second features along the sidewalls of the first features; and

removing the first features and at least some of the third material to leave a patterned mask comprising the second features in combination with other features defined by the pedestals.

2. The method of claim 1 wherein the patterning of the second material occurs prior to forming the third material.

3. The method of claim 1 wherein the patterning of the second material occurs after the removal of at least some of the third material.

4. The method of claim 1 wherein the topography of the third material includes regions of the third material extending entirely across the gaps.

5. The method of claim 1 wherein the third material does not extend entirely across the gaps, and wherein the recesses extend to a surface of the base.

6. The method of claim 1 wherein said other features comprise the pedestals.

7. The method of claim 1 wherein said other features comprise segments of the third material patterned while using the pedestals as a mask.

8. The method of claim 1 wherein said other features comprise segments of the second material patterned while using the pedestals as a mask.

9. The method of claim 1 wherein the first material comprises photoresist, the second material comprises silicon dioxide, and the fourth material comprises polymer containing silicon and/or one or more metals.

10. The method of claim 9 wherein the third material comprises carbon.

11. The method of claim 1 wherein the first features comprise photoresist and have a first width, and are formed by:

photolithographically patterning the photoresist to form a plurality of spaced apart blocks;

each of said blocks having a width that is about three times the first width and being spaced from one another by distances of about three times the first width; and

laterally trimming the blocks to form the first features.

12. The method of claim 1 wherein at least some of the second features of the patterned mask are about a same width as at least some of said other features of the patterned mask that are defined by the pedestals.

13. The method of claim 1 wherein at least some of the second features of the patterned mask are a substantially different width than at least some of said other features of the patterned mask that are defined by the pedestals.

14. The method of claim 1 wherein the second features of the patterned mask and said other features of the patterned mask together form structures of the patterned mask, with the structures being spaced from one another by gaps;

and wherein all of the gaps are about the same width as one another.

15. The method of claim 1 wherein the second features of the patterned mask and said other features of the patterned mask together form structures of the patterned mask, with the structures being spaced from one another by gaps;

and wherein some of the gaps are much wider than others.

16. A method of forming a patterned mask, comprising:

forming spaced-apart first features over a base, the first features comprising a first material and having sidewalls;

the first features being spaced from one another by gaps;

forming a second material along the sidewalls of the first features;

the second material being compositionally different from the first material;

removing some of the second material from within the gaps to pattern the second material into a plurality of second features along the sidewalls of the first features;

the first and second features together forming a plurality of projections over the base;

forming a third material over the projections and between the projections;

the third material having an undulating topography with peaks over the projections and valleys between the peaks;

the third material being compositionally different from the second material;

forming a fourth material within the valleys;

the fourth material being compositionally different from the third material;

subjecting the third material to an etch while using the fourth material as a mask to pattern the third material into a plurality of third features; and

after patterning the third material into the third features, removing the first features to leave a patterned mask comprising the second and third features.

17. The method of claim 16 wherein the patterning of the second material into the second features occurs prior to the patterning of the third material into the third features.

18. The method of claim 16 wherein:

the first material comprises photoresist, the second material comprises silicon dioxide, the third material comprises carbon and the fourth material comprises polymer containing silicon and/or one or more metals; and

the third material is at a temperature above a reflow temperature of the photoresist as the third material is formed.

19. The method of claim 16 wherein:

the second material has an undulating topography formed substantially across the features and gaps; and

prior to forming the third material, the second material is subjected to an anisotropic etch to form openings extending through the second material to the base in the gaps, while leaving the second material along the sidewalls as the second features.

20. The method of claim 16 wherein first features are all spaced from one another by about equal-distance gaps.

21. The method of claim 20 wherein the first features comprise photoresist and are formed by photolithographically patterning the photoresist to form a plurality of spaced apart blocks having a first pitch that is about a factor of three different from a pitch of the patterned mask comprising the second and third features.

22. A method of forming a patterned mask, comprising:

forming spaced-apart photoresist features over a base, the photoresist features having sidewalls, and being spaced from one another by gaps;

forming a second material along the sidewalls of the photoresist features;

the second material not being photoresist;

removing some of the second material from within the gaps to pattern the second material into a plurality of second features along the sidewalls of the photoresist features;

the photoresist features and the second features together forming a plurality of spaced-apart laminate structures;

forming a third material over the laminate structures while leaving recesses extending to the base between the laminate structures;

the third material being compositionally different from the second material;

forming pedestals within the gaps;

the pedestals comprising fourth material which is compositionally different from the third material; and

after forming the fourth material, removing at least some of the third material and the photoresist features to leave a patterned mask comprising the second features and the pedestals.

23. The method of claim 22 wherein the photoresist has a reflow temperature, and wherein the third material is at a temperature above the reflow temperature as the third material is formed.

24. The method of claim 22 wherein the first features are formed by photolithographically patterning photoresist to form a plurality of spaced apart blocks having a first pitch that is about a factor of three different from a pitch of the patterned mask comprising the second features and pedestals.

25. The method of claim 22 wherein the second features and the pedestals comprise structures, and the structures are all substantially equally spaced from one another.

26. The method of claim 22 wherein the second features and the pedestals comprise structures, and the structures are not all substantially equally spaced from one another.

27. The method of claim 22 wherein the second features and pedestals are all about a same width as one another.

28. The method of claim 22 wherein the second features and pedestals are not all about a same width as one another.