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Semiconductor light-emitting device

  • US 8,294,165 B2
  • Filed: 01/29/2007
  • Issued: 10/23/2012
  • Est. Priority Date: 03/30/2006
  • Status: Active Grant
First Claim
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1. A light-emitting device comprising:

  • a substrate having a plane surface;

    a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light;

    laminated structure which covers the semiconductor light-emitting element and contacts the plane surface of the substrate, the structure having a radius R1 and a height R2, where R1 and R2 satisfy ½

    (R1)<

    R2<

    2R1, the laminated structure comprising;

    a first light transmissible layer;

    a phosphor layer which covers the first light transmissible layer, the phosphor layer contacting with the plane surface of the substrate and containing phosphor particles and matrix, a surface of the phosphor layer having unevenness reflecting shapes of the phosphor particles, the phosphor particles having a diameter ranging from 45 μ

    m to 70 μ

    m; and

    a second light transmissible layer which covers the phosphor layer and contacting with the plane surface of the substrate,wherein the phosphor particles are contained in the phosphor layer at a concentration of 20 wt % or more.

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