Semiconductor light-emitting device
First Claim
Patent Images
1. A light-emitting device comprising:
- a substrate having a plane surface;
a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light;
laminated structure which covers the semiconductor light-emitting element and contacts the plane surface of the substrate, the structure having a radius R1 and a height R2, where R1 and R2 satisfy ½
(R1)<
R2<
2R1, the laminated structure comprising;
a first light transmissible layer;
a phosphor layer which covers the first light transmissible layer, the phosphor layer contacting with the plane surface of the substrate and containing phosphor particles and matrix, a surface of the phosphor layer having unevenness reflecting shapes of the phosphor particles, the phosphor particles having a diameter ranging from 45 μ
m to 70 μ
m; and
a second light transmissible layer which covers the phosphor layer and contacting with the plane surface of the substrate,wherein the phosphor particles are contained in the phosphor layer at a concentration of 20 wt % or more.
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Abstract
A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.
58 Citations
12 Claims
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1. A light-emitting device comprising:
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a substrate having a plane surface; a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light; laminated structure which covers the semiconductor light-emitting element and contacts the plane surface of the substrate, the structure having a radius R1 and a height R2, where R1 and R2 satisfy ½
(R1)<
R2<
2R1, the laminated structure comprising;a first light transmissible layer; a phosphor layer which covers the first light transmissible layer, the phosphor layer contacting with the plane surface of the substrate and containing phosphor particles and matrix, a surface of the phosphor layer having unevenness reflecting shapes of the phosphor particles, the phosphor particles having a diameter ranging from 45 μ
m to 70 μ
m; anda second light transmissible layer which covers the phosphor layer and contacting with the plane surface of the substrate, wherein the phosphor particles are contained in the phosphor layer at a concentration of 20 wt % or more. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification