High-power device having thermocouple embedded therein and method for manufacturing the same

• US 8,294,247 B2
• Filed: 09/17/2007
• Issued: 10/23/2012
• Est. Priority Date: 09/28/2006
• Status: Expired due to Fees

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Kwak, Chang-Soo, Uhm, Man-Seok, Yom, In-Bok
• Primary Examiner(s): Arroyo, Teresa M
• Application Number:
  US12/442,883
• Publication Number:
  US 20100090329A1
• Time in Patent Office: 1,863 Days
• Field of Search: 257/467, 257/468, 257/469, 257/470, 257/675, 257/690, 257/691, 257/E31.131, 257/E23.08, 257/E21.53
• US Class Current: 257/675
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/1815 Shape

Abstract

Provided is a high-power device having a thermocouple (thermoelectric couple) for measuring the temperature of a transistor constituting a high-power device. The high-power device includes a heating element, a thermocouple formed adjacent to the heating element, and a dielectric body formed between the heating element and the thermocouple.

Claims

1. A high-power device, comprising:

a heating element;

a thermocouple formed adjacent to the heating element;

a dielectric body formed between the heating element and the thermocouple;

wherein the thermocouple includes first and second thin films made of two kinds of metals and alloys;

wherein one end of each the first and the second thin films are joined to each other to form a hot junction;

a via contact connected to the thermocouple; and

a pad for connecting the via contact to an external lead frame;

wherein, a temperature difference of two sides of the hot junction in the first and the second thin films of the thermocouple causes a thermoelectromotive force to be generated between the two sides of the hot junction by a seebeck effect, a thermal current flows according to the thermoelectromotive force, such that a temperature of the high-power device is measured by measuring the thermal current;

wherein the thermoelectromotive force is determined by a temperature difference between the two sides of the hot junction; and

wherein the measured thermoelectromotive force is proportional to the temperature.

2. The high-power device of claim 1, further comprising:

a first substrate;

a second substrate; and

a gate electrode;

wherein the thermocouple is formed on the first substrate;

wherein the second substrate is formed on the first substrate so as to cover the thermocouple;

wherein the gate electrode is formed on the second substrate so as to correspond to the thermocouple.

3. The high-power device of claim 2, wherein a recess groove is formed on the second substrate at a portion corresponding to the thermocouple.

4. The high-power device of claim 1, wherein a center part of the heating element is aligned to correspond to the hot junction.