Solid-state memory device, data processing system, and data processing device

  • US 8,295,080 B2
  • Filed: 06/04/2010
  • Issued: 10/23/2012
  • Est. Priority Date: 06/11/2009
  • Status: Expired due to Fees
First Claim
Patent Images

1. A solid-state memory device comprising:

  • first and second electrodes arranged to a first direction; and

    a superlattice laminate sandwiched between the first and second electrodes, the superlattice laminate having a plurality of crystal layers laminated one another, the crystal layers including first and second crystal layers having mutually different compositions, whereinat least a part of the superlattice laminate has an interface of the first and second crystal layers that intersects with the first direction, andthe first crystal layer included in the superlattice laminate comprises a phase change material.

View all claims

    Thank you for your feedback