Capping of copper interconnect lines in integrated circuit devices
First Claim
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1. A method for capping lines, the method comprising:
- forming a metal film layer on a copper line by a selective deposition process, the copper line disposed in a dielectric substrate, wherein the depositing also results in the deposition of stray metal material on the surface of the dielectric substrate; and
etching with an isotropic etching process to remove a portion of the metal film layer and the stray metal material on the surface of the dielectric substrate;
wherein the metal film layer is deposited at an initial thickness sufficient to leave a metal film layer cap remaining on the copper line following the removal of the stray metal material.
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Abstract
A method for capping lines includes forming a metal film layer on a copper line by a selective deposition process, the copper line disposed in a dielectric substrate, wherein the depositing also results in the deposition of stray metal material on the surface of the dielectric substrate, and etching with an isotropic etching process to remove a portion of the metal film layer and the stray metal material on the surface of the dielectric substrate, wherein the metal film layer is deposited at an initial thickness sufficient to leave a metal film layer cap remaining on the copper line following the removal of the stray metal material.
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Citations
20 Claims
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1. A method for capping lines, the method comprising:
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forming a metal film layer on a copper line by a selective deposition process, the copper line disposed in a dielectric substrate, wherein the depositing also results in the deposition of stray metal material on the surface of the dielectric substrate; and etching with an isotropic etching process to remove a portion of the metal film layer and the stray metal material on the surface of the dielectric substrate; wherein the metal film layer is deposited at an initial thickness sufficient to leave a metal film layer cap remaining on the copper line following the removal of the stray metal material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for capping lines, the method comprising:
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depositing a metal film layer having a thickness on a copper line, the copper line disposed in a dielectric substrate, wherein the depositing results in the deposition of stray metal material on the surface of the dielectric substrate; and etching with an anisotropic etching process to remove a portion of the metal film layer and the stray metal material on the surface of the dielectric substrate; wherein the metal film layer is deposited at an initial thickness sufficient to leave a metal film layer cap remaining on the copper line following the removal of the stray metal material. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method for capping lines, the method comprising:
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forming a metal film layer on a copper line by a selective deposition process, the copper line disposed in a dielectric substrate, wherein the depositing also results in the deposition of stray metal material on and in contact with the surface of the dielectric substrate; and etching with an etching process to remove a portion of the metal film layer and the stray metal material from the surface of the dielectric substrate; wherein the metal film layer is deposited at an initial thickness sufficient to leave a metal film layer cap remaining on the copper line following the removal of the stray metal material. - View Dependent Claims (18, 19, 20)
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Specification