Hall sensor with temperature drift control

• US 8,299,778 B2
• Filed: 12/01/2010
• Issued: 10/30/2012
• Est. Priority Date: 08/31/2006
• Status: Active Grant

• Current Assignee: Itron Global Sarl (Itron, Inc.)
• Original Assignee: Itron, Inc.
• Inventors: Haddab, Youcef, Kerlain, Alexandre, Mosser, Vincent, Van Wyk, Hartman
• Primary Examiner(s): ISLA RODAS, RICHARD
• Application Number:
  US12/957,545
• Publication Number:
  US 20110068785A1
• Time in Patent Office: 699 Days
• Field of Search: 324/117.H, 324/235
• US Class Current: 324/117.H
• CPC Class Codes: G01D 3/036 on measuring arrangements themselves
• CPC Class Codes: G01D 5/142 using Hall-effect devices measuring magnetic variables using Hall-effect or other galvanomagnetic devices G01R33/06
• CPC Class Codes: G01R 1/44 Modifications of instruments for temperature compensation
• CPC Class Codes: G01R 15/202 using Hall-effect devices Hall elements in arrangements for measuring electrical power G01R21/08
• CPC Class Codes: G01R 33/07 Hall effect devices
• CPC Class Codes: G01R 33/075 Hall devices configured for spinning current measurements
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices
• CPC Class Codes: Y04S 20/30 Smart metering, e.g. specially adapted for remote reading

Abstract

Disclosed are apparatus and methodology for providing approaches to remove or reduce thermal drift of the magnetic sensitivity of Hall sensor devices, to improve the stability of resulting signals of interest. Samples of a particular signal or signals of interest having improved stability make for advantageous use in conjunction with electricity meters. At the same time, associated designs and related components have greater simplicity, for reduced complexity in implementation. Among alternative embodiments, a gating structure selected of various present alternative designs may be used to partially cover, to an intentionally selected degree, an active area of a Hall sensor, so that a zero-drift supply current value may likewise be selected so as to satisfy other criteria which may be applicable to use of the Hall sensor. In other alternative embodiments, a gate structure is used which fully covers the Hall sensor active area, but a gate-control technique is practiced which is based on combined use with an external, relatively high resistance voltage-divider circuitry arrangement, again for eliminating temperature-based drift of the magnetic sensitivity of the Hall sensor arrangement, regardless of the end use to which such Hall sensor is applied.

Claims

1. A Hall sensor with thermal drift control, comprising:

a planar cross-shaped semiconductive material having a central magnetic field responsive active area portion at the relative center of outer perimeter crossed arm portions, said central magnetic field responsive active area portion having a top surface;

a plurality of electrical contacts coupled to said outer perimeter crossed arm portions;

a gate electrode coupled to and partially covering a portion of said top surface of said central magnetic field responsive active area portion, said gate electrode having a geometric center located substantially at a geometric center of said Hall sensor; and

an electrical conductor coupling said gate electrode to one of said plurality of electrical contacts.

2. A Hall sensor as in claim 1, wherein said active area portion and said gate electrode both are respectively cross-shaped.

3. A Hall sensor as in claim 2, wherein said gate electrode is positioned at a forty-five degree angle relative to said active area portion.

4. A Hall sensor as in claim 1, wherein said gate electrode comprises at least one electrode.

5. A Hall sensor as in claim 4, wherein said gate electrode comprises at least one rectangular electrode.

6. A Hall sensor as in claim 4, wherein said gate electrode comprises a plurality of electrically coupled individual gate electrode portions.

7. A Hall sensor as in claim 6, where said gate electrode comprises a plurality of electrically coupled individual rectangular gate electrode portions.

8. A Hall sensor as in claim 1, further combined as the input of an electricity meter.

9. A self-biasing Hall sensor, comprising:

a planar cross-shaped semiconductive material having a central magnetic field responsive active area portion at the relative center of outer perimeter crossed arm portions;

a plurality of electrical contacts coupled to said outer perimeter crossed arm portions;

a gate electrode coupled to and covering said central magnetic field responsive active area portion; and

a gate control external to said planar semiconductive material;

wherein said gate control comprises a resistive voltage divider having an input portion thereof coupled to a pair of said plurality of electrical contacts and an output portion thereof coupled to said gate electrode such that said Hall sensor is self-biased by said plurality of electrical contacts of said Hall sensor.