Method of forming an MOS transistor
First Claim
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1. A method of forming an MOS transistor comprising:
- providing a semiconductor substrate;
forming the MOS transistor on the semiconductor substrate including forming the MOS transistor with an active region and a termination region that is external to the active region;
forming an active trench in the active region;
forming a first trench and a second trench within the termination region;
forming a first conductor within the termination region and overlying the first trench wherein the first conductor is electrically connected to a second conductor within the first trench; and
forming the second conductor to electrically contact a third conductor that is within the active trench.
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Abstract
In one embodiment, a method of forming an MOS transistor includes forming the MOS transistor to have an active region and a termination region. Within the termination region the method includes forming a plurality of trenches having a conductor within the plurality of trenches. The method also includes forming another conductor to make electrical contact to one of the conductors within the plurality of trenches.
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Citations
15 Claims
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1. A method of forming an MOS transistor comprising:
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providing a semiconductor substrate; forming the MOS transistor on the semiconductor substrate including forming the MOS transistor with an active region and a termination region that is external to the active region; forming an active trench in the active region; forming a first trench and a second trench within the termination region; forming a first conductor within the termination region and overlying the first trench wherein the first conductor is electrically connected to a second conductor within the first trench; and forming the second conductor to electrically contact a third conductor that is within the active trench. - View Dependent Claims (2, 3, 4, 5, 6, 13)
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7. A method of forming a transistor comprising:
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providing a semiconductor substrate having a surface; forming a plurality first trenches in an active region of the transistor; forming a second trench and a third trench extending into the semiconductor substrate including forming the second trench and the third trench in a termination region of the transistor that is not in the active region of the transistor; forming a first conductor within the second trench; forming a second conductor within the third trench; forming a third conductor overlying the surface of the semiconductor substrate and overlying the second trench and electrically contacting the first conductor; and forming the first conductor electrically connected to a fourth conductor within at least one trench of the plurality of first trenches. - View Dependent Claims (8, 9, 10, 11, 12, 14, 15)
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Specification