Film-like article and method for manufacturing the same

• US 8,305,213 B2
• Filed: 01/20/2005
• Issued: 11/06/2012
• Est. Priority Date: 01/23/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Akiba, Mai, Kanno, Yohei, Tachimura, Yuko
• Primary Examiner(s): POPE, DARYL C
• Application Number:
  US10/586,049
• Publication Number:
  US 20070159353A1
• Time in Patent Office: 2,847 Days
• Field of Search: 340/572.1, 340/572.2, 340/572.7, 340/572.8
• US Class Current: 340/572.1
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components

Abstract

Since the chip formed from a silicon wafer is thick, the chip is protruded from the surface or the chip is so large that it can be seen through the eyes, which affects the design of a business card or the like. Hence, it is an object of the present invention to provide a new integrated circuit which has a structure by which the design is not affected. In view of the above problems, it is a feature of the invention to equip a film-like article with a thin film integrated circuit. It is another feature of the invention that the IDF chip has a semiconductor film of 0.2 mm or less, as an active region. Therefore, the IDF chip can be made thinner as compared with a chip formed from a silicon wafer. In addition, such an integrated circuit can have light transmitting characteristic unlike a chip formed from a silicon wafer.

Claims

1. A film-like article comprising:

a substrate having a groove;

a circuit capable of storing information described on the substrate; and

an antenna in the groove, the antenna being connected to the circuit.

2. A film-like article according to claim 1,

wherein when a thickness of the film-like article is D, a position to dispose the circuit X may be set so as to satisfy (½

)·

D−

30 μ

m<

X<

(½

)·

D+30 μ

m.

5. A film-like article according claim 1,

wherein the thin film integrated circuit has light-transmitting characteristic.

8. A film-like article according to claim 1,

wherein the circuit has an insulating film containing nitrogen.

11. A film-like article according to claim 1,

wherein thickness of the circuit is in a range of 0.1 μ

m to 3 μ

m.

14. A film-like article according to claim 1,

wherein the circuit has a semiconductor film containing hydrogen of 1×

10¹⁹ atoms/cm³ to 5×

10²⁰ atoms/cm³.

17. A film-like article according to any one of claims 14 to 16,

wherein the semiconductor film includes a source, a drain, and a channel region, and

the source, the drain, and the channel region are provided perpendicular to direction of bending the film-like article.

18. A film-like article according to claim 1,

wherein the film-like article comprises a plurality of circuits, and

the plurality of circuits are integrated with antennas.

21. A film-like article according to claim 1,

wherein the film-like article is a business card.

3. A film-like article comprising:

a IDF chip;

an antenna connected to the IDF chip through an anisotropic conductor; and

a resin covering the IDF chip and the antenna,

wherein the IDF chip and the antenna are provided in a depression of the film-like article.

6. A film-like article according claim 3,

wherein the IDF chip has light-transmitting characteristic.

9. A film-like article according to claim 3,

wherein the IDF chip has an insulating film containing nitrogen.

12. A film-like article according to claim 3,

wherein thickness of the circuit IDF chip is in a range of 0.1 μ

m to 3 μ

m.

15. A film-like article according to claim 3,

wherein the circuit IDF chip has a semiconductor film containing hydrogen of 1×

10¹⁹ atoms/cm³ to 5×

10²⁰ atoms/cm³.

19. A film-like article according to claim 3,

wherein the film-like article comprises a plurality of IDF chips, and

the plurality of IDF chips are integrated with antennas.

22. A film-like article according to claim 3,

wherein the film-like article is a business card.

4. A film-like article comprising:

a substrate;

a circuit capable of storing information described on the substrate;

a first antenna on a top surface of the substrate; and

,

a second antenna on a bottom surface of the substrate,

wherein the first antenna is electrically connected to the second antenna through an opening of the substrate, and

wherein the first antenna and the second antenna are electrically connected to the circuit.

7. A film-like article according claim 4,

wherein the circuit has light-transmitting characteristic.

10. A film-like article according to claim 4,

wherein the thin film integrated circuit has an insulating film containing nitrogen.

13. A film-like article according to claim 4,

wherein thickness of the circuit is in a range of 0.1 μ

m to 3 μ

m.

16. A film-like article according to claim 4,

wherein the circuit has a semiconductor film containing hydrogen of 1×

10¹⁹ atoms/cm³ to 5×

10²⁰ atoms/cm³.

20. A film-like article according to claim 4,

wherein the film-like article comprises a plurality of circuits, and

the plurality of circuits are integrated with antennas.

23. A film-like article according to claim 4,

wherein the film-like article is a business card.