×

Etching processes used in MEMS production

  • US 8,308,962 B2
  • Filed: 09/12/2008
  • Issued: 11/13/2012
  • Est. Priority Date: 09/14/2007
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of manufacturing an electronic device, comprising:

  • providing a process chamber comprising an electronic device, the electronic device comprising a layer to be etched;

    introducing an etchant into an expansion chamber, the etchant comprising a noble gas fluoride;

    reducing the volume of the expansion chamber after introducing the etchant into the expansion chamber to increase the pressure of the etchant, wherein the volume of the expansion chamber is reduced when the expansion chamber is not in fluid communication with the process chamber; and

    introducing the pressurized etchant into the process chamber to expose the sacrificial layer to the etchant.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×