Hybrid heterojunction solar cell fabrication using a doping layer mask
First Claim
1. A method of forming a solar cell device, comprising:
- forming a first doping layer on a back surface of a crystalline silicon substrate;
texturing a front surface of the crystalline silicon substrate, wherein the first doping layer disposed on the back surface is configured to prevent substantial etching of the back surface during the process of texturing the front surface; and
selectively forming a second doping layer on a desired region of the front surface of the crystalline silicon substrate; and
heating the first doping layer and second doping layer to cause the first doping layer and second doping layer to diffuse into the back surface and the front surface of the crystalline silicon substrate.
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Abstract
Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.
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Citations
21 Claims
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1. A method of forming a solar cell device, comprising:
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forming a first doping layer on a back surface of a crystalline silicon substrate; texturing a front surface of the crystalline silicon substrate, wherein the first doping layer disposed on the back surface is configured to prevent substantial etching of the back surface during the process of texturing the front surface; and selectively forming a second doping layer on a desired region of the front surface of the crystalline silicon substrate; and heating the first doping layer and second doping layer to cause the first doping layer and second doping layer to diffuse into the back surface and the front surface of the crystalline silicon substrate. - View Dependent Claims (2, 3, 4, 5, 8, 9, 10)
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6. A method of forming a solar cell device, comprising:
- dielectric layer from the back surface comprises A method of forming a solar cell device, comprising;
forming a first doping layer on a back surface of a crystalline silicon substrate;
texturing a front surface of the crystalline silicon substrate, wherein the first doping layer disposed on the back surface is configured to prevent substantial etching of the back surface during the process of texturing the front surface;heating the first doping layer and the crystalline silicon substrate to cause the first doping layer to diffuse into the back surface of the crystalline silicon substrate; forming a dielectric layer over at least a portion of the back surface after forming the first doping layer on the back surface; removing portions of the dielectric layer from the back surface to form a plurality of exposed regions of the crystalline silicon substrate by selectively depositing an etchant material that comprises a dopant atom on the dielectric layer; and depositing a metal layer over the back surface of the crystalline silicon substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the crystalline silicon substrate. - View Dependent Claims (7)
- dielectric layer from the back surface comprises A method of forming a solar cell device, comprising;
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11. A method of forming a solar cell device, comprising:
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forming an amorphous silicon layer on a back surface of a crystalline silicon substrate; texturing a front surface of the crystalline silicon substrate, wherein the amorphous silicon layer disposed on the back surface is configured to prevent substantial etching of the back surface during the process of texturing the front surface; forming a doping layer on the front surface of the crystalline silicon substrate; and heating the amorphous silicon layer and the doping layer to cause dopant atoms in the amorphous silicon layer to diffuse into the back surface and dopant atoms in the doping layer to diffuse into the front surface of the crystalline silicon substrate. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method of forming a solar cell device, comprising:
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forming a doping layer comprising a silicon layer comprising a first type of doping atom on a back surface of a silicon substrate; forming a dielectric layer over the doping layer on the back surface of the silicon substrate; heating the silicon substrate to cause the first type of doping atom to diffuse into the silicon substrate; removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the silicon substrate by selectively depositing a deposited etchant material that comprises a dopant atom on the dielectric layer; and depositing a metal layer over the back surface of the silicon substrate, wherein the metal layer is in electrical communication with at least one of the exposed regions of the silicon substrate. - View Dependent Claims (18, 19, 20, 21)
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Specification