Light emitting diode package and fabrication method thereof

• US 8,310,023 B2
• Filed: 01/27/2009
• Issued: 11/13/2012
• Est. Priority Date: 02/23/2005
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Ho Joon, Hwang, Woong Lin, Choi, Seog Moon, Lee, Sung Jun, Choi, Sang Hyun, Lim, Chang Hyun
• Primary Examiner(s): Luu, Pho M
• Application Number:
  US12/360,444
• Publication Number:
  US 20090137073A1
• Time in Patent Office: 1,386 Days
• Field of Search: 257/E21.503, 257/E21.511, 438/108
• US Class Current: 257/503
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

The present invention provides an LED package and the fabrication method thereof. The present invention provides an LED package including a submount silicon substrate and insulating film and electrode patterns formed on the submount silicon substrate. The LED package also includes a spacer having a through hole, formed on the electrode patterns. The LED package further includes an LED received in the through hole, flip-chip bonded to the electrode patterns, and an optical element attached to the upper surface of the spacer.

Claims

1. A fabrication method of a light emitting diode package comprising steps of:

forming an insulating film and electrode patterns on the insulating film on a submount silicon substrate;

mounting an LED on the electrode patterns by flip-chip bonding;

placing a spacer having a through hole on the electrode patterns to dispose the LED in the through hole; and

adhering a planar optical element to the upper surface of the spacer.

2. The fabrication method of the light emitting diode package according to claim 1, wherein the step of placing a spacer on the electrode patterns comprises selectively etching a silicon substrate to form the through hole therein, and adhering the silicon substrate with the through hole to the electrode patterns.

3. The fabrication method of the light emitting diode package according to claim 2, further comprising a step of coating a reflective metal film on the side surface of the through hole in the silicon substrate.

4. The fabrication method of the light emitting diode package according to claim 1, wherein the step of forming a spacer on the electrode patterns comprises forming the through hole in an insulating resin substrate, and adhering the insulating resin substrate with the through hole formed therein to the electrode patterns.

5. The fabrication method of the light emitting diode package according to claim 4, further comprising a step of coating a reflective metal film on the side surface of the through hole in the insulating resin substrate.

6. The fabrication method of the light emitting diode package according to claim 1, wherein the insulating film is formed by thermally oxidizing the submount silicon substrate.

7. A fabrication method of light emitting diode packages comprising steps of:

forming an insulating film and a plurality of electrode patterns in their order on a silicon substrate;

mounting a plurality of LEDs on the electrode patterns by flip-chip bonding;

placing a spacer having a plurality of through holes on the plurality of electrode patterns to dispose each of the plurality of LEDs in each of the through holes;

adhering a planar optical element to the upper surface of the spacer; and

dicing a resultant structure with the planar optical element adhered thereto into individual LED packages.