Semiconductor chip assembly with post/base heat spreader with ESD protection layer

• US 8,310,043 B2
• Filed: 12/22/2010
• Issued: 11/13/2012
• Est. Priority Date: 03/25/2008
• Status: Expired due to Fees

• Current Assignee: Bridge Semiconductor Corporation
• Original Assignee: Bridge Semiconductor Corporation
• Inventors: Lin, Charles W. C., Wang, Chia-Chung
• Primary Examiner(s): Cao, Phat X
• Application Number:
  US12/975,429
• Publication Number:
  US 20110089465A1
• Time in Patent Office: 692 Days
• Field of Search: 257/706, 257/707, 438/118, 438/122
• US Class Current: 257/706
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32013 the layer connector being larger than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/32188 the layer connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83855 Hardening the adhesive by curing, i.e. thermosetting
• CPC Class Codes: H01L 2224/85205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/85207 Thermosonic bonding
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 24/28 Structure, shape, material or disposition of the layer connectors prior to the connecting process
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01026 : Iron [Fe]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/0134 : Quaternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/16195 : Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2933/0066 : relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H05K 1/0204 : using means for thermal conduction connection in the thickness direction of the substrate H05K1/0207 takes precedence
• CPC Class Codes: H05K 1/056 : the metal substrate being covered by an organic insulating layer
• CPC Class Codes: H05K 2201/09054 : Raised area or protrusion of metal substrate
• CPC Class Codes: H05K 2201/10106 : Light emitting diode [LED]
• CPC Class Codes: H05K 2203/0369 : Etching selective parts of a metal substrate through part of its thickness, e.g. using etch resist

Abstract

A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a post, a base, an ESD protection layer and an underlayer. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive trace, electrically isolated from the underlayer and thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive, the base extends laterally from the post and the ESD protection layer is sandwiched between the base and the underlayer. The conductive trace provides signal routing between the pad and the terminal.

Claims

1. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base, an ESD protection layer and an underlayer wherein (i) the post is adjacent to the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward direction, (iii) the ESD protection layer is a thermally conductive, electrically insulative material that contacts and is sandwiched between and thermally connects and electrically isolates the base and the underlayer, extends below the base, covers the post in the downward direction and extends laterally beyond the post, and (iv) the underlayer extends below the ESD protection layer, covers the post in the downward direction and extends laterally beyond the post and wherein the heat spreader includes a cap that extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post and that contacts and overlaps the adhesive; and

a conductive trace that includes a pad and a terminal;

wherein the semiconductor device overlaps the post, the base, the ESD protection lay and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal, is electrically isolated from the underlayer and is thermally connected to the post and thereby thermally connected to the underlayer and wherein the pad and the cap have the same thickness where closest to one another and are coplanar with one another;

wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad; and

wherein the post extends into the opening and the underlayer extends below the semiconductor device and the pad.

2. The assembly of claim 1, wherein the semiconductor device is an LED chip.

3. The assembly of claim 1, wherein the semiconductor device is electrically connected to the pad using a wire bond and is thermally connected to the post using a die attach.

4. The assembly of claim 1, wherein the semiconductor device is electrically connected to the pad using a first solder joint and is thermally connected to the pad using a second solder joint.

5. The assembly of claim 1, wherein the adhesive contacts the post and the base.

6. The assembly of claim 1, wherein the adhesive covers and surrounds the post in the lateral directions.

7. The assembly of claim 1, wherein the adhesive is coplanar with a top of the post.

8. The assembly of claim 1, wherein the adhesive extends below the base.

9. The assembly of claim 1, wherein the adhesive extends to peripheral edges of the assembly.

10. The assembly of claim 1, wherein the ESD protection layer is (i) epoxy filled with aluminum oxide or aluminum nitride, (ii) polyimide filled with aluminum oxide or aluminum nitride, or (iii) diamond-like carbon.

11. The assembly of claim 1, wherein the post is integral with the base.

12. The assembly of claim 1, wherein the post has a diameter that decreases as it extends upwardly from the base to its top.

13. The assembly of claim 1, wherein the pad extends above the adhesive and the terminal extends below the adhesive.

14. The assembly of claim 1, wherein the conductive trace includes a plated through-hole in an electrically conductive path between the pad and the terminal.

15. The assembly of claim 1, wherein the terminal and the underlayer have the same thickness where closest to one another and are coplanar with one another.

16. The assembly of claim 1, wherein the pad, the terminal, and the underlayer are the same metals and the post and the base are the same metal.

17. The assembly of claim 1, wherein the pad, the terminal, and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper and the post and the base are copper.

18. The assembly of claim 1, wherein the conductive trace includes a copper core shared by the pad and the terminal.

19. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base, a cap, an ESD protection layer and an underlayer, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, (iii) the cap extends above and is adjacent to and covers in upward direction and extends laterally from a top of the post, (iv) the ESD protection layer is a thermally conductive, electrically insulative material that contacts and is sandwiched between and thermally connects and electrically isolates the base and the underlayer, extends below the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the underlayer extends below the ESD protection layer, covers the post in the downward direction and extends laterally beyond the post; and

a conductive trace that includes a pad, a terminal and a plated through-hole, wherein the plated through-hole extends below the pad and above the terminal and an electrically conductive path between the pad and the terminal includes the plated through-hole;

wherein the semiconductor device is mounted on the cap, overlaps the post, the base, ESD protection layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal, is electrically isolated from the underlayer and is thermally connected to the cap and thereby thermally connected to the underlayer;

wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad;

wherein the pad extends above the adhesive, the terminal extends below the adhesive and the plated through-hole extends through the adhesive; and

wherein the post extends into the opening, the cap overlaps the adhesive and the underlayer extends below the semiconductor device and the pad and wherein the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.

20. The assembly of claim 19, wherein the semiconductor device is an LED chip.

21. The assembly of claim 19, wherein the semiconductor device is electrically connected to the pad using a wire bond and is thermally connected to the cap using a die attach.

22. The assembly of claim 19, wherein the semiconductor device is electrically connected to the pad using a first solder joint and is thermally connected to the cap using a second solder joint.

23. The assembly of claim 19, wherein the adhesive contacts the post, the base and the cap, covers and surrounds the post in the lateral directions and extends to peripheral edges of the assembly.

24. The assembly of claim 19, wherein the ESD protection layer is (i) epoxy filled with aluminum oxide or aluminum nitride, (ii) polyimide filled with aluminum oxide or aluminum nitride, or (iii) diamond-like carbon.

25. The assembly of claim 19, wherein the post has a diameter that decreases as it extends upwardly from the base to the cap.

26. The assembly of claim 19, wherein the post is coplanar with the adhesive at the cap.

27. The assembly of claim 19, wherein the base extends to peripheral edges of the assembly.

28. The assembly of claim 19, wherein the terminal and the underlayer have the same thickness where closest to one another and are coplanar with one another.

29. The assembly of claim 19, wherein the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another, the terminal and the underlayer have the same thickness where closest to one another and are coplanar with one another and the base is thicker than the pad, the terminal and the underlayer.

30. The assembly of claim 19, wherein the pad, the terminal, cap and the underlayer are the same metals and the post and the base are the same metal.

31. The assembly of claim 19, wherein the pad, the terminal, the cap and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper and the post and the base are copper.

32. The assembly of claim 19, wherein the conductive trace includes a copper core shared by the pad, the terminal and the plated through-hole and the heat spreader includes a copper core shared by the post, the base and the cap.

33. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base, an ESD protection layer and an underlayer wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, (iii) the ESD protection layer is a thermally conductive, electrically insulative material that contacts and is sandwiched between and thermally connects and electrically isolates the base and the underlayer, extends below the base, covers the post in the downward direction and extends laterally beyond the post, and (iv) the underlayer extends below the ESD protection layer, covers the post in the downward direction and extends laterally beyond the post;

a substrate that includes a dielectric layer, wherein an aperture extends through the substrate; and

a conductive trace that includes a pad and a terminal;

wherein the semiconductor device overlaps the post, the base, the ESD protection layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal, is electrically isolated from the underlayer and is thermally connected to the post and thereby thermally connected to the underlayer;

wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad;

wherein the substrate is mounted on the adhesive and extends above the base; and

wherein the post extends into the opening and the aperture, and the underlayer extend below the semiconductor device and the pad and wherein the terminal and the underlayer have the same thickness where closest to one another and are coplanar with one another and the base is thicker than the pad, the terminal and the underlayer.

34. The assembly of claim 33, wherein the semiconductor device is an LED chip.

35. The assembly of claim 33, wherein the semiconductor device is electrically connected to the pad using a wire bond and is thermally connected to the post using a die attach.

36. The assembly of claim 33, wherein the adhesive contacts the post, the base and the dielectric layer, covers and surrounds the post in the lateral directions and extends to peripheral edges of the assembly.

37. The assembly of claim 33, wherein the ESD protection layer is (i) epoxy filled with silver, aluminum oxide or aluminum nitride, (ii) polyimide filled with silver, aluminum oxide or aluminum nitride, or (iii) diamond-like carbon.

38. The assembly of claim 33, wherein the post has a diameter that decreases as it extends upwardly from the base to its top.

39. The assembly of claim 33, wherein the post is coplanar with the adhesive above the dielectric layer.

40. The assembly of claim 33, wherein the pad, the terminal the underlayer are the same metals and the post and the base are the same metal.

41. The assembly of claim 33, wherein the pad, the terminal and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper, the post and the base are copper and the conductive trace includes a copper core shared by the pad and the terminal.

42. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base, a cap, an ESD protection layer and an underlayer, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the ESD protection layer is a thermally conductive, electrically insulative material that contacts and is sandwiched between and thermally connects and electrically isolates the base and the underlayer, extends below the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the underlayer extends below the ESD protection layer, covers the post in the downward direction and extends laterally beyond the post;

a substrate that includes a dielectric layer, wherein an aperture extends through the substrate; and

a conductive trace that includes a pad, a terminal and a plated through-hole, wherein the plated through-hole extends below the pad and above the terminal and an electrically conduct path between the pad and the terminal includes the plated through-hole;

wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the ESD protection layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal, is electrically isolated from the underlayer and is thermally connected to the cap and thereby thermally connected to the underlayer;

wherein the adhesive is mounted on and extends above the base, extends between the post and the substrate, extends between the post and the plated through-hole, extends laterally from the post to or beyond the terminal and is sandwiched between the post and the dielectric layer, between the base and the dielectric layer, between the terminal and the dielectric layer and between the base and the pad;

wherein the substrate is mounted on the adhesive and extends above the base;

wherein the pad extends above the base, the adhesive, the dielectric layer and the ESD protection layer, the terminal extends below the base, the adhesive, the dielectric layer and the ESD protection layer and the plated through-hole extends through the base, the adhesive, the dielectric layer and the ESD protection layer and is spaced from the base; and

wherein the post extends into the opening and the aperture, the cap overlaps the adhesive and the underlayer extends below the semiconductor device, the substrate and the pad.

43. The assembly of claim 42, wherein the semiconductor device is mounted on the cap using a die attach, is electrically connected to the pad using a wire bond and is thermally connected to the cap using the die attach.

44. The assembly of claim 42, wherein the adhesive contacts the post, the base, the cap and the dielectric layer, covers and surrounds the post in the lateral directions and extends to peripheral edges of the assembly, the dielectric layer is spaced from post and the base and extends to peripheral edges of the assembly and the base extends to peripheral edges of the assembly.

45. The assembly of claim 42, wherein the ESD protection layer is (i) epoxy filled with aluminum oxide or aluminum nitride, (ii) polyimide filled with alumi oxide or aluminum nitride, or (iii) diamond-like carbon.

46. The assembly of claim 42, wherein the post has a diameter that decreases as it extends upwardly from the base to the cap.

47. The assembly of claim 42, wherein the post is coplanar with the adhesive at the cap.

48. The assembly of claim 42, wherein the pad and the cap are coplanar with one another and the terminal and the underlayer are coplanar with one another.

49. The assembly of claim 42, wherein the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another, the terminal and the underlayer have the same thickness where closest to one another and are coplanar with one another and the base is thicker than the pad, the terminal and the underlayer.

50. The assembly of claim 42, wherein the adhesive alone can intersect an imaginary horizontal line between the post and the dielectric layer, an imaginary horizontal line between the post and the plated through-hole, an imaginary vertical line between the base and the cap and an imaginary vertical line between the base and the dielectric layer.

51. The assembly of claim 42, wherein the pad, the terminal cap, the plated through-hole and the underlayer are the same metals, include a gold, silver or nickel surface layer and are primarily copper, the post and the base are copper, the conductive trace includes a buried copper core shared by the pad, the terminal and the plated through-hole and the heat spreader includes a copper core shared by the post, the base and the cap.

52. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base, a cap, an ESD protection layer and an underlayer, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, (iii) the cap extends above and is adjacent to and covers in upward direction and extends laterally from a top of the post, (iv) the ESD protection layer is a thermally conductive, electrically insulative material that contacts and is sandwiched between and thermally connects and electrically isolates the base and the underlayer, extends below the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the underlayer extends below the ESD protection layer, covers the post in the downward direction and extends laterally beyond the post; and

a conductive trace that includes a pad, a terminal and a plated through-hole, wherein the plated through-hole extends below the pad and above the terminal and an electrically conductive path between the pad and the terminal includes the plated through-hole;

wherein the semiconductor device is mounted on the cap, overlaps the post, the base, ESD protection layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal, is electrically isolated from the underlayer and is thermally connected to the cap and thereby thermally connected to the underlayer;

wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad;

wherein the pad extends above the adhesive, the terminal extends below the adhesive and the plated through-hole extends through the adhesive; and

wherein the post extends into the opening, the cap overlaps the adhesive and the underlayer extends below the semiconductor device and the pad and wherein the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another, the terminal and the underlayer have the same thickness where closest to one another and are coplanar with one another and the base is thicker than the pad, the terminal and the underlayer.

53. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base, a cap, an ESD protection layer and an underlayer, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, (iii) the cap extends above and is adjacent to and covers in upward direction and extends laterally from a top of the post, (iv) the ESD protection layer is a thermally conductive, electrically insulative material that contacts and is sandwiched between and thermally connects and electrically isolates the base and the underlayer, extends below the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the underlayer extends below the ESD protection layer, covers the post in the downward direction and extends laterally beyond the post; and

a conductive trace that includes a pad, a terminal and a plated through-hole, wherein the plated through-hole extends below the pad and above the terminal and an electrically conductive path between the pad and the terminal includes the plated through-hole;

wherein the semiconductor device is mounted on the cap, overlaps the post, the base, ESD protection layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal, is electrically isolated from the underlayer and is thermally connected to the cap and thereby thermally connected to the underlayer;

wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad;

wherein the pad extends above the adhesive, the terminal extends below the adhesive and the plated through-hole extends through the adhesive; and

wherein the post extends into the opening, the cap overlaps the adhesive and the underlayer extends below the semiconductor device and the pad and wherein the pad, the terminal, cap and the underlayer are the same metals and the post and the base are the same metal.

54. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base, a cap, an ESD protection layer and an underlayer, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, (iii) the cap extends above and is adjacent to and covers in upward direction and extends laterally from a top of the post, (iv) the ESD protection layer is a thermally conductive, electrically insulative material that contacts and is sandwiched between and thermally connects and electrically isolates the base and the underlayer, extends below the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the underlayer extends below the ESD protection layer, covers the post in the downward direction and extends laterally beyond the post; and

a conductive trace that includes a pad, a terminal and a plated through-hole, wherein the plated through-hole extends below the pad and above the terminal and an electrically conductive path between the pad and the terminal includes the plated through-hole;

wherein the semiconductor device is mounted on the cap, overlaps the post, the base, ESD protection layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal, is electrically isolated from the underlayer and is thermally connected to the cap and thereby thermally connected to the underlayer;

wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad;

wherein the pad extends above the adhesive, the terminal extends below the adhesive and the plated through-hole extends through the adhesive; and

wherein the post extends into the opening, the cap overlaps the adhesive and the underlayer extends below the semiconductor device and the pad and wherein the pad, the terminal, the cap and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper and the post and the base are copper.

55. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base, a cap, an ESD protection layer and an underlayer, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, (iii) the cap extends above and is adjacent to and covers in upward direction and extends laterally from a top of the post, (iv) the ESD protection layer is a thermally conductive, electrically insulative material that contacts and is sandwiched between and thermally connects and electrically isolates the base and the underlayer, extends below the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the underlayer extends below the ESD protection layer, covers the post in the downward direction and extends laterally beyond the post; and

a conductive trace that includes a pad, a terminal and a plated through-hole, wherein the plated through-hole extends below the pad and above the terminal and an electrically conductive path between the pad and the terminal includes the plated through-hole;

wherein the semiconductor device is mounted on the cap, overlaps the post, the base, ESD protection layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal, is electrically isolated from the underlayer and is thermally connected to the cap and thereby thermally connected to the underlayer;

wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad;

wherein the pad extends above the adhesive, the terminal extends below the adhesive and the plated through-hole extends through the adhesive; and

wherein the post extends into the opening, the cap overlaps the adhesive and the underlayer extends below the semiconductor device and the pad and wherein the conductive trace includes a copper core shared by the pad, the terminal and the plated through-hole and the heat spreader includes a copper core shared by the post, the base and the cap.