Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device

• US 8,313,603 B2
• Filed: 12/03/2007
• Issued: 11/20/2012
• Est. Priority Date: 12/05/2006
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ikeda, Hisao, Aoyama, Tomoya, Ibe, Takahiro, Hirakata, Yoshiharu, Yamazaki, Shunpei
• Primary Examiner(s): TOLIN, MICHAEL A
• Application Number:
  US11/949,217
• Publication Number:
  US 20080260938A1
• Time in Patent Office: 1,814 Days
• Field of Search: 156/230, 156/234, 156/272.2, 427/66, 427/69, 427/561, 427/255.6
• US Class Current: 156/230
• CPC Class Codes: B05C 11/00 Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00 means for manipulating or holding work B05C13/00; enclosures for apparatus, booths B05C15/00; spray booths B05B16/00
• CPC Class Codes: C23C 14/042 using masks
• CPC Class Codes: C23C 14/12 Organic material
• CPC Class Codes: C23C 14/26 by resistance or inductive heating of the source
• CPC Class Codes: C23C 14/28 by wave energy or particle radiation C23C14/32 - C23C14/48 take precedence
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3

Abstract

An object is to improve use efficiency of an evaporation material, to reduce manufacturing cost of a light-emitting device, and to reduce manufacturing time needed for a light-emitting device including a layer containing an organic compound. The pressure of a film formation chamber is reduced, a plate is rapidly heated by heat conduction or heat radiation by using a heat source, a material layer on a plate is vaporized in a short time to be evaporated to a substrate on which the material layer is to be formed (formation substrate), and then the material layer is formed on the formation substrate. The area of the plate that is heated rapidly is set to have the same size as the formation substrate and film formation on the formation substrate is completed by one application of heat.

Claims

1. A method of film formation comprising the steps of:

forming a first layer containing a material having a high hole transporting property onto one surface of a first substrate;

forming a second layer containing a metal oxide on the first layer;

disposing a second substrate so that one surface of the second substrate faces the one surface of the first substrate, wherein the other surface of the first substrate is in contact with a heat source; and

heating the first substrate by the heat source to form a mixed layer containing the material having a high hole transporting property and the metal oxide on the one surface of the second substrate,

wherein an area of the heat source is larger than that of the first substrate.

2. The method of film formation according to claim 1, the first layer is formed by a coating method.

3. The method of film formation according to claim 1, the second layer is formed by a coating method.

4. The method of film formation according to claim 1, the heat source is a heater.

5. The method of film formation according to claim 1, the first substrate is a conductive substrate.

6. A method for manufacturing a light-emitting device, comprising the steps of:

forming a first layer containing an organic compound having a high hole transporting property on one surface of a first substrate;

forming a second layer containing a metal oxide on the first layer;

holding a second substrate having a first electrode on a surface thereof so as to face the second layer, wherein the other surface of the first substrate is in contact with a heat source; and

heating the first substrate by the heat source and evaporating the first layer and the second layer to form a mixed layer containing the organic compound having a high hole transporting property and the metal oxide on the first electrode

wherein an area of the heat source is larger than that of the first substrate.

7. The method for manufacturing a light-emitting device according to claim 6, the first layer is formed by a coating method.

8. The method for manufacturing a light-emitting device according to claim 6, the second layer is formed by a coating method.

9. The method for manufacturing a light-emitting device according to claim 6, the heat source is a heater.

10. The method for manufacturing a light-emitting device according to claim 6, the first substrate is a conductive substrate.

11. A method of film formation comprising the steps of:

forming a thermal conductive layer selectively on one surface of a first substrate;

forming a first layer containing a material on the thermal conductive layer;

disposing a second substrate so that one surface of the second substrate faces the one surface of the first substrate, wherein the other surface of the first substrate is in contact with a heat source; and

heating the first substrate by the heat source to form a second layer containing the material selectively on the one surface of the second substrate.

12. The method of film formation according to claim 11, the first layer is formed by a coating method.

13. The method of film formation according to claim 11, wherein the heat source has a larger area than the one surface of the first substrate.

14. The method of film formation according to claim 11, the heat source is a heater.

15. The method of film formation according to claim 11, the first substrate is a conductive substrate.