Oxide-rich liner layer for flowable CVD gapfill
First Claim
1. A method of forming a silicon oxide layer on a patterned substrate containing a trench, the method comprising:
- transferring the substrate into a substrate processing chamber;
forming an oxygen-rich liner layer on the substrate including in the trench;
forming a gapfill dielectric layer on the substrate and in the trench, wherein the gapfill dielectric layer has a lower oxygen content than the oxygen-rich liner layer and the gapfill dielectric layer is flowable during formation; and
curing the gapfill dielectric layer at an elevated temperature to transfer some of the oxygen from the oxygen-rich liner layer into the gapfill dielectric layer.
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Abstract
The formation of a gap-filling silicon oxide layer with reduced volume fraction of voids is described. The deposition involves the formation of an oxygen-rich less-flowable liner layer before an oxygen-poor more-flowable gapfill layer. However, the liner layer is deposited within the same chamber as the gapfill layer. The liner layer and the gapfill layer may both be formed by combining a radical component with an unexcited silicon-containing precursor (i.e. not directly excited by application of plasma power). The liner layer has more oxygen content than the gapfill layer and deposits more conformally. The deposition rate of the gapfill layer may be increased by the presence of the liner layer. The gapfill layer may contain silicon, oxygen and nitrogen and be converted at elevated temperature to contain more oxygen and less nitrogen. The presence of the gapfill liner provides a source of oxygen underneath the gapfill layer to augment the gas phase oxygen introduced during the conversion.
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15 Claims
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1. A method of forming a silicon oxide layer on a patterned substrate containing a trench, the method comprising:
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transferring the substrate into a substrate processing chamber; forming an oxygen-rich liner layer on the substrate including in the trench; forming a gapfill dielectric layer on the substrate and in the trench, wherein the gapfill dielectric layer has a lower oxygen content than the oxygen-rich liner layer and the gapfill dielectric layer is flowable during formation; and curing the gapfill dielectric layer at an elevated temperature to transfer some of the oxygen from the oxygen-rich liner layer into the gapfill dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification