Solution composition for forming oxide thin film and electronic device including the oxide thin film
First Claim
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1. A solution composition for forming an oxide thin film, comprising:
- a first compound including zinc;
a second compound including indium; and
a third compound including magnesium,wherein the zinc and magnesium is included at an atomic ratio of about 1;
0.01 to about 1;
4.
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Abstract
A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.
5 Citations
15 Claims
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1. A solution composition for forming an oxide thin film, comprising:
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a first compound including zinc; a second compound including indium; and a third compound including magnesium, wherein the zinc and magnesium is included at an atomic ratio of about 1;
0.01 to about 1;
4. - View Dependent Claims (2, 3, 4, 5, 9)
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6. A solution composition for forming an oxide thin film, comprising:
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a first compound including zinc; a second compound including indium; and a third compound including at least one of magnesium acetate, magnesium alkoxide, magnesium halide, magnesium nitrate, magnesium sulfate, magnesium carbonylate, magnesium carbonate, and hydrates thereof. - View Dependent Claims (7, 8)
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10. An electronic device comprising an oxide semiconductor including zinc, indium, and magnesium,
wherein the oxide semiconductor includes the zinc and magnesium at an atomic ratio of about 1: - 0.01 to about 1;
4. - View Dependent Claims (11, 12, 13, 14, 15)
- 0.01 to about 1;
Specification