Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal
First Claim
1. An aluminum nitride crystal growth method comprising:
- a step of preparing a laminar baseplate furnished with a starting substrate having a major surface and a back side on the reverse side from the major surface, a first layer formed on the back side, and a second layer formed on the first layer; and
a step of growing aluminum nitride crystal onto the major surface of the starting substrate by vapor deposition;
whereinthe first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate;
the second layer is made of a substance whose thermal conductivity is higher than that of the first layer;
the preparation step includes;
a substep of arranging on the back side of the starting substrate a blend in which a powder and a solvent have been mixed together, and disposing the second layer onto the blend; and
a substep of sintering the blend in order to make it into the first layer; and
the solvent is made by mixing together acetone, formalin (formaldehyde), furfuryl alcohol, and a polyimide resin.
1 Assignment
0 Petitions
Accused Products
Abstract
Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.
7 Citations
15 Claims
-
1. An aluminum nitride crystal growth method comprising:
-
a step of preparing a laminar baseplate furnished with a starting substrate having a major surface and a back side on the reverse side from the major surface, a first layer formed on the back side, and a second layer formed on the first layer; and a step of growing aluminum nitride crystal onto the major surface of the starting substrate by vapor deposition;
whereinthe first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate; the second layer is made of a substance whose thermal conductivity is higher than that of the first layer; the preparation step includes; a substep of arranging on the back side of the starting substrate a blend in which a powder and a solvent have been mixed together, and disposing the second layer onto the blend; and a substep of sintering the blend in order to make it into the first layer; and the solvent is made by mixing together acetone, formalin (formaldehyde), furfuryl alcohol, and a polyimide resin. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
Specification