Image sensor element for backside-illuminated sensor

  • US 8,324,002 B2
  • Filed: 08/09/2011
  • Issued: 12/04/2012
  • Est. Priority Date: 09/24/2007
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • providing a substrate having a front surface and a back surface;

    forming a photodiode photodetector on the front surface of the substrate; and

    forming a gate of a transfer transistor that extends substantially over the photodiode photodetector,wherein the gate of the transfer transistor includes a reflective layer that extends substantially over the photodetector,wherein the photodetector includes a pinned-photodiode.

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