Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide

CAFC
  • US 8,334,016 B2
  • Filed: 03/19/2009
  • Issued: 12/18/2012
  • Est. Priority Date: 09/28/2000
  • Status: Active Grant
First Claim
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1. A process for making an insulator in a microelectronic device, the process comprising:

  • introducing a first reactant component into a deposition chamber;

    introducing a second reactant component into the deposition chamber; and

    alternately repeating introducing the first reactant component and the second reactant component into the deposition chamber;

    wherein deposition of the first reactant component and the second reactant component are self-limiting;

    wherein said first reactant component comprises a metal alkylamide;

    wherein said second reactant component interacts with the deposited first reactant component to form the insulator; and

    wherein said insulator comprises oxygen and the metal from the metal alkylamide.

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