Semiconductor device and method of manufacturing the same

• US 8,334,591 B2
• Filed: 10/19/2009
• Issued: 12/18/2012
• Est. Priority Date: 10/22/2008
• Status: Active Grant

• Current Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Kusano, Hidetoshi
• Primary Examiner(s): Malsawma, Lex
• Application Number:
  US12/588,524
• Publication Number:
  US 20100096747A1
• Time in Patent Office: 1,156 Days
• Field of Search: 257/706, 257/E23.08, 438/122
• US Class Current: 257/706
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/29 of an individual layer connector
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29199 Material of the matrix
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29299 Base material
• CPC Class Codes: H01L 2224/29324 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/29386 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 23/367 : Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3675 : characterised by the shape of the housing
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49822 : Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/50 : for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/05432 : Al2O3
• CPC Class Codes: H01L 2924/05442 : SiO2
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15312 : being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/18161 : of a flip chip
• CPC Class Codes: H01L 2924/19041 : being a capacitor

Abstract

A semiconductor device includes: a substrate; a semiconductor chip with a surface facing down mounted on the substrate; a reinforcement material provided on the substrate in a peripheral region of a region on which the semiconductor chip is mounted; and a heat sink coupled to the semiconductor chip via a highly thermally conductive material. The heat sink is disposed on the semiconductor chip and the reinforcement material by being coupled to the reinforcement material via an adhesive material, and is provided with an uneven area on a side coupled to the reinforcement material.

Claims

1. A semiconductor device comprising:

a thermal interface material in physical contact with a central region of a lid, a recess extending into a peripheral region of the lid;

a semiconductor chip between said thermal interface material and a central region of a substrate, a sealing resin layer being between a sealing band material and a peripheral region of the substrate,

wherein said sealing band material is within said recess, said thermal interface material being adjacent to said recess and said sealing band material.

2. The semiconductor device according to claim 1, wherein said sealing resin layer is in physical contact with said peripheral region of the substrate and said sealing band material.

3. The semiconductor device according to claim 1, wherein said semiconductor chip is between a capacitor and said central region of the substrate.

4. The semiconductor device according to claim 1, wherein a surface of the lid is in physical contact with said thermal interface material and said sealing band material, said recess extending into said peripheral region of the lid from said surface.

5. The semiconductor device according to claim 1, wherein said recess is a dimple that partially extends into said lid.

6. The semiconductor device according to claim 1, wherein said recess is a hole that extends through said lid.

7. The semiconductor device according to claim 1, wherein a depth of said recess into said increases from an edge of the lid.

8. The semiconductor device according to claim 1, wherein said sealing band material is between said sealing resin layer and said peripheral region of the lid.

9. The semiconductor device according to claim 1, wherein said sealing resin layer is in physical contact with said semiconductor chip.

10. The semiconductor device according to claim 1, wherein said sealing band material is an adhesive material.

11. The semiconductor device according to claim 1, wherein said sealing band material is in physical contact with said lid.

12. The semiconductor device according to claim 1, wherein said lid is a highly thermally conductive material.

13. The semiconductor device according to claim 1, wherein said substrate comprises stacked interlayer insulating films and wiring, said wiring being throughout said stacked interlayer insulating films.

14. The semiconductor device according to claim 1, wherein said peripheral region of the substrate is between said sealing resin layer and a solder ball.

15. The semiconductor device according to claim 1, wherein an underfill material is between said semiconductor chip and said central region of the substrate.

16. The semiconductor device according to claim 1, wherein solder bumps extend from said semiconductor chip and connection bumps extend from said central region of the substrate, said solder bumps being in physical and electrical contact with said connection bumps.

17. The semiconductor device according to claim 1, wherein said semiconductor chip is in physical contact with said central region of the substrate and said thermal interface material.

18. The semiconductor device according to claim 1, wherein said thermal interface material is configured to transfer heat between said semiconductor chip and said lid.

19. The semiconductor device according to claim 1, wherein said thermal interface material is in physical contact with said semiconductor chip and said central region of the lid.

20. The semiconductor device according to claim 1, wherein said thermal interface material is a mixture of a thermally conductive filler and a resin material.

21. The semiconductor device according to claim 20, wherein said mixture includes a curable silicone composition.

22. The semiconductor device according to claim 20, wherein said thermally conductive filler is from the group consisting of silver, aluminum, aluminum oxide, and silicon dioxide.

23. A method of manufacturing the semiconductor device of claim 1, the method comprising:

clamping an upper mold to a lower mold to form a cavity, said semiconductor chip and said substrate being encased between said upper and lower molds;

introducing a liquid sealing resin into said cavity, said liquid sealing resin solidifying to become said sealing resin layer.