Sputtering composite target, method for manufacuturing transparent conductive film using the same and transparent conductive film-provided base material

• US 8,338,002 B2
• Filed: 06/04/2009
• Issued: 12/25/2012
• Est. Priority Date: 06/06/2008
• Status: Active Grant

• Current Assignee: Sony Chemical & Information Device Corporation (Sony Group Corp.)
• Original Assignee: Dexerials Corporation
• Inventors: Hommura, Hayato, Katori, Kenji, Sudo, Go
• Primary Examiner(s): Chen, Vivian
• Application Number:
  US12/478,143
• Publication Number:
  US 20090305066A1
• Time in Patent Office: 1,300 Days
• Field of Search: None
• US Class Current: 428/701
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/3407 Cathode assembly for sputtering apparatus, e.g. Target
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer
• CPC Class Codes: Y10T 428/31786 Of polyester [e.g., alkyd, etc.]
• CPC Class Codes: Y10T 428/31938 Polymer of monoethylenically unsaturated hydrocarbon

Abstract

A sputtering composite target includes: an oxide based component containing indium oxide; and a carbon based component.

Claims

1. A sputtering composite target comprising:

an oxide-based component containing indium oxide and having a target surface area; and

a carbon-based component laminated on at least a portion of the target surface area of the oxide-based component such that an area ratio occupied by the carbon-based component is from 2 to 15% relative to 100% of the target surface area;

wherein the carbon-based component comprises at least one of a carbon powder, a carbon chip and a carbide material including at least one of Al₄C₃, NbC, TaC and ZrC.

2. The sputtering composite target according to claim 1, wherein the sputtering composite target comprises at least one element selected from the group consisting of tin, zinc, tungsten and germanium.

3. The sputtering composite target according to claim 2, wherein a proportion of a content of the element is from 1.0 to 30.0% by mass.

4. The sputtering composite target according to claim 1, wherein a content of the carbon-based component is from 0.6 to 6.0 parts by weight based on 100 parts by weight of the oxide-based component.

5. The sputtering composite target according to claim 1, wherein the oxide-based component is a sintered body, and the carbon-based component is a non-sintered body.

6. The sputtering composite target according to claim 1, further comprising a metal element comprising at least one of tin, zinc, tungsten and germanium.

7. A method for manufacturing a transparent conductive film comprising the act of:

forming a transparent conductive film on a substrate using a sputtering composite target comprising an oxide-based component containing indium oxide having a target surface area and a carbon-based component laminated on at least a portion of the target surface area of the oxide-based component such that an area ratio occupied by the carbon-based component is from 2 to 15% relative to 100% of the target surface area;

wherein forming a transparent conductive film on a substrate comprises introducing a sputtering gas into a chamber at a gas flow rate of from 5 to 50 sccm.

8. The method for manufacturing a transparent conductive film according to claim 7, wherein the substrate is a sheet or film of a plastic.

9. The method for manufacturing a transparent conductive film according to claim 7, wherein the substrate is not heated.

10. The method for manufacturing a transparent conductive film of claim 7, wherein forming a transparent conductive film on a substrate comprises maintaining a gas pressure from 0.5 to 2.0 Pa within the chamber.

11. The method for manufacturing a transparent conductive film of claim 7, wherein forming a transparent conductive film on a substrate comprises maintaining the substrate at room temperature.

12. A sputtering composite target comprising:

an oxide-based component containing indium oxide and having a target surface area;

a carbon-based component laminated on at least a portion of the target surface area of the oxide-based component such that an area ratio occupied by the carbon-based component is from 2 to 15% relative to 100% of the target surface area;

wherein the carbon-based component comprises at least one of a carbon powder, a carbon chip and a carbide materials including at least one of Al₄C₃, NbC, TaC and ZrC;

wherein the oxide-based component comprises a disc shape; and

wherein the carbon-based component comprises at least one sector shape disposed on a surface of the disc shaped oxide-based component and having a prescribed angle.