Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum

• US 8,343,837 B2
• Filed: 01/21/2010
• Issued: 01/01/2013
• Est. Priority Date: 01/30/2009
• Status: Expired due to Fees

• Current Assignee: Alsephina Innovations Inc. (Quarterhill Inc. (f/k/a Wi-LAN Inc.))
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Carter, Richard, Beyer, Sven, Metzger, Joachim, Binder, Robert
• Primary Examiner(s): Landau, Matthew
• Assistant Examiner(s): LUKE, DANIEL M
• Application Number:
  US12/691,192
• Publication Number:
  US 20100193872A1
• Time in Patent Office: 1,076 Days
• Field of Search: 257/E21.444, 438/216, 438/275
• US Class Current: 438/275
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 21/823857 with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/7843 the means being an applied insulating layer

Abstract

The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

Claims

1. A method, comprising:

forming a first gate electrode structure of a first transistor above a semiconductor layer, said first gate electrode structure comprising a first placeholder electrode material formed above a high-k gate insulation layer;

forming a second gate electrode structure of a second transistor above the semiconductor layer, said second gate electrode structure comprising a second placeholder electrode material formed above a high-k insulation layer, wherein the second transistor has a different conductivity type as compared to said first transistor;

forming drain and source regions of said first and second transistors;

removing said first placeholder electrode material concurrently with removing said second placeholder electrode material;

forming a metal layer above said first and second gate electrode structures and selectivity removing the metal layer from above said first gate electrode structure so as to adjust a work function of said second gate electrode structure;

forming a lanthanum-containing material layer above said first and second transistors after forming and selectively removing said metal layer; and

forming a metal-containing electrode material on said lanthanum-containing material layer.

2. The method of claim 1, wherein forming said first gate electrode structure comprises forming a metal-containing barrier material on said high-k gate insulation layer and forming said first placeholder electrode material on said metal-containing barrier material.

3. The method of claim 2, wherein said lanthanum-containing material layer is formed on said metal-containing barrier material.

4. The method of claim 3, further comprising performing a heat treatment so as to initiate diffusion of lanthanum species into said metal-containing barrier material.

5. The method of claim 1, wherein said first transistor represents an N-channel transistor.

6. The method of claim 1, wherein said second gate electrode structure comprises a second high-k gate insulation layer and a second placeholder electrode material formed above said second high-k gate insulation layer and wherein said first placeholder electrode material and said second placeholder electrode material are removed by performing a common removal process.

7. The method of claim 6, further comprising forming a conductive barrier layer on said metal layer prior to forming said lanthanum-containing material layer.

8. The method of claim 7, further comprising removing said conductive barrier layer and said metal layer selectively from above said high-k gate insulation layer of said first gate electrode structure prior to forming said lanthanum-containing material layer.

9. The method of claim 8, further comprising forming a metal-containing material above said first gate electrode structure and said second gate electrode structure after forming said lanthanum-containing material layer.

10. The method of claim 1, wherein said lanthanum-containing material layer is formed with a thickness of approximately 1-25 Å

.

11. A method, comprising:

removing a placeholder material of a first gate electrode structure of a first transistor concurrently with removing a placeholder material of of a second gate electrode structure of a second transistor so as to expose a metal-containing material formed on a high-k gate insulation layer of said first and second gate electrode structures, said first and second transistors having different conductivity types;

forming a work function adjusting material on said metal-containing material in said first gate electrode structure and on a conductive barrier material in said second gate electrode structure;

forming a first metal layer on said work function adjusting material; and

forming a second metal layer on said metal-containing material of said second gate electrode structure, said second metal layer defining a work function of said second gate electrode structure in combination with said metal-containing material.

12. The method of claim 11, wherein forming said work function adjusting material comprises forming a lanthanum-containing material.

13. The method of claim 11, wherein forming said second metal layer comprises forming said second metal layer on said metal-containing material of said first and second gate electrode structures and removing said second metal layer selectively from said first gate electrode structure.

14. The method of claim 13, further comprising forming said conductive barrier layer on said second metal layer of said second gate electrode structure prior to forming said work function adjusting material.

15. The method of claim 14, wherein forming said work function adjusting material on said metal-containing material selectively in said first gate electrode structure comprises forming said work function adjusting material over said metal-containing material.

16. The method of claim 11, further comprising performing a heat treatment so as to initiate incorporation of a metal species of said work function adjusting material into said metal-containing material selectively in said first gate electrode structure.

17. The method of claim 15, wherein said first metal layer is formed on said work function adjusting material formed on said conductive barrier material of said second gate electrode structure.

18. The method of claim 11, wherein said placeholder material of said first and second gate electrode structures is removed after forming drain and source regions of said first and second transistors.

19. The method of claim 11, wherein said first transistor represents an N-channel transistor.