Split-layer design for double patterning lithography
First Claim
1. A method, in a data processing system, for converting a set of single-layer design rules into a set of split-layer design rules for double patterning lithography (DPL), the method comprising:
- identifying, by a processor in the data processing system, the set of single-layer design rules and minimum lithographic resolution pitch constraints for single exposure, wherein the set of single-layer design rules comprise a first plurality of minimum distances that are required by a set of first shapes in a single-layer design;
modifying, by the processor, each of the first plurality of minimum distances in the set of single-layer design rules with regard to the minimum lithographic resolution pitch constraints for single exposure, thereby forming the set of split-layer design rules, wherein the set of split-layer design rules comprise at least a second plurality of minimum distances that are required by at least a set of second shapes and a set of third shapes in a split-layer design; and
coding, by the processor, the set of split-layer design rules into a design rule checker for use in designing a double patterning lithography design.
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Abstract
A mechanism is provided for converting a set of single-layer design rules into a set of split-layer design rules for double patterning lithography (DPL). The set of single-layer design rules and minimum lithographic resolution pitch constraints for single exposure are identified. The set of single-layer design rules comprise a first plurality of minimum distances that are required by a set of first shapes in a single-layer design. Each of the first plurality of minimum distances in the set of single-layer design rules are modified with regard to the minimum lithographic resolution pitch constraints for single exposure, thereby forming the set of split-layer design rules. The set of split-layer design rules comprise a second plurality of minimum distances that are required by a set of second shapes and a set of third shapes in a split-layer design. The set of split-layer design rules are then coded into a design rule checker.
41 Citations
21 Claims
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1. A method, in a data processing system, for converting a set of single-layer design rules into a set of split-layer design rules for double patterning lithography (DPL), the method comprising:
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identifying, by a processor in the data processing system, the set of single-layer design rules and minimum lithographic resolution pitch constraints for single exposure, wherein the set of single-layer design rules comprise a first plurality of minimum distances that are required by a set of first shapes in a single-layer design; modifying, by the processor, each of the first plurality of minimum distances in the set of single-layer design rules with regard to the minimum lithographic resolution pitch constraints for single exposure, thereby forming the set of split-layer design rules, wherein the set of split-layer design rules comprise at least a second plurality of minimum distances that are required by at least a set of second shapes and a set of third shapes in a split-layer design; and coding, by the processor, the set of split-layer design rules into a design rule checker for use in designing a double patterning lithography design. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A computer program product comprising a non-transitory computer readable storage medium having a computer readable program stored therein, wherein the computer readable program, when executed on a computing device, causes the computing device to:
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identify a set of single-layer design rules and minimum lithographic resolution pitch constraints for single exposure, wherein the set of single-layer design rules comprise a first plurality of minimum distances that are required by a set of first shapes in a single-layer design; modify each of the first plurality of minimum distances in the set of single-layer design rules with regard to the minimum lithographic resolution pitch constraints for single exposure, thereby forming a set of split-layer design rules, wherein the set of split-layer design rules comprise at least a second plurality of minimum distances that are required by at least a set of second shapes and a set of third shapes in a split-layer design; and code the set of split-layer design rules into a design rule checker for use in designing a double patterning lithography design. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. An apparatus, comprising:
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a processor; and a memory coupled to the processor, wherein the memory comprises instructions which, when executed by the processor, cause the processor to; identify a set of single-layer design rules and minimum lithographic resolution pitch constraints for single exposure, wherein the set of single-layer design rules comprise a first plurality of minimum distances that are required by a set of first shapes in a single-layer design; modify each of the first plurality of minimum distances in the set of single-layer design rules with regard to the minimum lithographic resolution pitch constraints for single exposure, thereby forming a set of split-layer design rules, wherein the set of split-layer design rules comprise at least a second plurality of minimum distances that are required by at least a set of second shapes and a set of third shapes in a split-layer design; and code the set of split-layer design rules into a design rule checker for use in designing a double patterning lithography design. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification