Semiconductor device and method for fabricating the same

  • US 8,354,726 B2
  • Filed: 05/15/2007
  • Issued: 01/15/2013
  • Est. Priority Date: 05/19/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first active region surrounded with an isolation region of a semiconductor substrate;

    a first gate electrode formed over the first active region and having a protrusion protruding on the isolation region;

    a first side-wall insulating film formed on the side surface of the first gate electrode;

    an auxiliary pattern formed over the semiconductor substrate to be spaced apart in the gate width direction from the protrusion of the first gate electrode;

    a second side-wall insulating film formed on the side surface of the auxiliary pattern; and

    a stress-containing insulating film containing internal stress and formed to cover the first gate electrode, the first side-wall insulating film, the auxiliary pattern, and the second side-wall insulating film,wherein the distance between the first gate electrode and the auxiliary pattern is smaller than the sum total of;

    the sum of the thicknesses of the first and second side-wall insulating films; and

    the double of the thickness of the stress-containing insulating film,the first side-wall insulating film includes a first sidewall formed on the side surface of the first gate electrode, and having an L-shaped cross section, and a second sidewall formed on the first sidewall,the first sidewall is made of an oxide film, andthe second sidewall is made of a nitride film.

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