Light emitting device, method of manufacturing the same, and light emitting device package

• US 8,368,107 B2
• Filed: 12/17/2010
• Issued: 02/05/2013
• Est. Priority Date: 01/15/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Bae, Jung Hyeok, Jeong, Young Kyu, Park, Kyung Wook, Park, Duk Hyun
• Primary Examiner(s): CAMPBELL, SHAUN M
• Application Number:
  US12/971,945
• Publication Number:
  US 20110175124A1
• Time in Patent Office: 781 Days
• Field of Search: 257/98, 257/E33.067
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting device according to the embodiment includes a conductive support member having a step portion at an outer peripheral region thereof, a protective member for filling the step portion formed at the outer peripheral region of the conductive support member, a reflective layer over the conductive support member, and a light emitting structure over the reflective layer and the protective member.

Claims

1. A light emitting device comprising:

a support electrode including a first region and a second region formed around the first region with a thickness thinner than a thickness of the first region, and the support electrode formed at a lateral side thereof with a curved surface;

a reflective layer over the support electrode;

a protective insulative member over the second region of the support electrode; and

a light emitting structure located over the reflective layer, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers,

wherein the protective insulative member has an inner surface and an outer surface, the distance between the inner and outer surface defining a width of the protective insulative member and the width increases from the bottom of the protective insulative member to the top of the protective insulative member.

2. The light emitting device of claim 1, wherein the protective insulative member protrudes upward from the second region.

3. The light emitting device of claim 1, wherein the protective insulative member has a thickness of 2 μ

m to 10 μ

m.

4. The light emitting device of claim 1, wherein the protective insulative member includes at least one selected from the group consisting of Si0₂, Si_xO_y, Si₃N₄, Si_xN_y, SiO_xN_y, Al₂O₃, TiO₂, ITO, AZO and ZnO.

5. The light emitting device of claim 1, wherein the support electrode includes at least one selected from the group consisting of Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, CuW and a semiconductor substrate doped with impurities.

6. The light emitting device of claim 1, further comprising an ohmic layer between the reflective layer and the light emitting structure.

7. The light emitting device of claim 6, wherein the ohmic layer includes at least one selected from the group consisting of ITO, Ni, Pt, Ir, Rh and Ag.

8. The light emitting device of claim 6, wherein the reflective layer includes at least one selected from the group consisting of Ag, Al, Pt, Pd and Cu.

9. The light emitting device of claim 1, wherein the support electrode includes a conductive support member and a bonding layer over the conductive support member.

10. The light emitting device of claim 9, wherein the bonding layer includes at least one selected from the group consisting of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag and Ta.

11. The light emitting device of claim 1, wherein the inner surface of the protective insulative member is inclined.

12. The light emitting device of claim 10, wherein the first region of the bonding layer has a thickness greater than a thickness of the second region of the bonding layer.

13. The light emitting device of claim 1, further comprising a current blocking layer between the light emitting structure and the reflective layer.

20. The light emitting device of claim 1, wherein the inner surface of the protective insulative member is inclined inwardly when moving in a vertical direction from bottom to top.

14. A light emitting device comprising:

a conductive support member;

a reflective layer over a first region of the conductive support member;

a protective insulative member over a second region of the conductive support member, which is positioned around the first region;

a light emitting structure located over the reflective layer and the protective insulative member, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers,

wherein a thickness of the protective insulative member is at least two times thicker than a thickness ranging from the active layer to the protective insulative member, and

wherein the protective insulative member has an inner surface and an outer surface, the distance between the inner and outer surface defining a width of the protective insulative member and the width increases from the bottom of the protective insulative member to the top of the protective insulative member.

15. The light emitting device of claim 14, wherein the thickness of the protective insulative member is 2 μ

m to 10 μ

m.

16. The light emitting device of claim 14, wherein the first region of the conductive support member is thicker than the second region of the conductive support member and the protective insulative member protrudes upward from the second region.

17. The light emitting device of claim 14, wherein the conductive support member is formed at a lateral side thereof with a curved surface.

18. The light emitting device of claim 14, wherein the protective insulative member includes at least one selected from the group consisting of Si0₂, Si_xO_y, Si₃N₄, Si_xN_y, SiO_xN_y, Al₂O₃, TiO₂, ITO, AZO and ZnO.

19. The light emitting device of claim 14, wherein the inner surface of the protective insulative member is inclined inwardly when moving in a vertical direction from bottom to top.