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Electromechanical devices having etch barrier layers

  • US 8,368,124 B2
  • Filed: 06/22/2009
  • Issued: 02/05/2013
  • Est. Priority Date: 09/20/2002
  • Status: Expired due to Fees
First Claim
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1. An apparatus, comprising:

  • a substrate;

    an electrode, wherein the electrode is located over the substrate;

    an additional layer located over the electrode, wherein the additional layer comprises SiO2,an etch barrier layer, wherein the etch barrier layer is located over the additional layer;

    an air gap, wherein the air gap is located adjacent the etch barrier layer; and

    a displaceable layer, wherein the displaceable layer is reflective to incident light.

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