Method of forming a semiconductor device

• US 8,377,745 B2
• Filed: 05/10/2011
• Issued: 02/19/2013
• Est. Priority Date: 05/18/2010
• Status: Expired due to Fees

• Current Assignee: PS4 Luxco S.a.r.l.
• Original Assignee: Elpida Memory Incorporated (Micron Technology, Inc.)
• Inventors: Shimada, Noriou, Fujishima, Tomoyuki
• Primary Examiner(s): Pham, Hoai V
• Application Number:
  US13/104,560
• Publication Number:
  US 20110287582A1
• Time in Patent Office: 651 Days
• Field of Search: 438/106, 438/109, 438/112, 257/E21.499
• US Class Current: 438/106
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/81 using a bump connector
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3135 Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/07802 not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/181 Encapsulation

Abstract

A method of forming a semiconductor device includes filling a gap of a semiconductor chip stack while carrying out a first heating process which heats the semiconductor chip stack from upper and lower portions of the semiconductor chip stack.

Claims

1. A method of forming a semiconductor device, the method comprising:

filling a gap of a semiconductor chip stack with a sealing agent while carrying out a first heating process which heats the semiconductor chip stack from upper and lower portions of the semiconductor chip stack.

2. The method according to claim 1, wherein the first heating process is started before filling the gap of a semiconductor chip stack.

3. The method according to claim 2, further comprising:

hardening the sealing agent by carrying out a second heating process which heats the semiconductor chip stack after the first heating process the semiconductor chip stack.

4. The method according to claim 1, wherein the first heating process comprises:

concurrently heating the upper and lower portions of the semiconductor chip stack.

5. The method according to claim 4, wherein concurrently heating the upper portion and the lower portion of the semiconductor chip stack comprises:

concurrently heating the upper portion of the semiconductor chip stack by a heater and the lower portion of the semiconductor chip stack by a heat stage.

6. The method according to claim 5, further comprising:

disposing a first sheet on a surface of the heater before the first heating process; and

disposing a second sheet on a surface of the heat stage before the first heating process.

7. The method according to claim 5, wherein concurrently heating the upper portion of the semiconductor chip stack by the heater and the lower portion of the semiconductor chip stack by the heat stage comprises:

concurrently heating the upper portion of the semiconductor chip stack by the heater and the lower portion of the semiconductor chip stack by the heat stage, the heater being substantially the same in temperature as the heat stage.

8. The method according to claim 4, wherein the heater has a contact portion which is greater in area than the upper portion of the semiconductor chip stack,

wherein the heat stage is greater in area than the lower portion of the semiconductor chip stack.

9. The method according to claim 1, wherein the first heating process comprises:

heating the semiconductor chip stack at a temperature which causes the sealing agent to flow.

10. A method of forming a semiconductor device, the method comprising:

filling between first and second semiconductor chips of a semiconductor chip stack with a sealing agent while heating the first and second semiconductor chips of the semiconductor chip stack using a heater and a heat stage, the first semiconductor chip being heated by at least the heat stage, the second semiconductor chip being heated by at least the heater, heating the first and second semiconductor chips being started before filling between the first and second semiconductor chips of a semiconductor chip stack.

11. The method according to claim 10, wherein heating the first and second semiconductor chips of the semiconductor chip stack comprises:

concurrently heating the first and second semiconductor chips of the semiconductor chip stack.

12. The method according to claim 10, further comprising:

pressing the semiconductor chip stack by the heater.

13. The method according to claim 10, further comprising:

curing the sealing agent by increasing a temperature of the heater and the heat stage.

14. The method according to claim 10, wherein the heater has a contact portion which is greater in area than the second semiconductor chip,

wherein the heat stage is greater in area than the first semiconductor chip.

15. A method of forming a semiconductor device, the method comprising:

stacking a plurality of semiconductor chips to form a chip stack structure;

heating the chip stack structure to apply thermal energy to the chip stack structure from both of lowermost and uppermost ones of the semiconductor chips of the chip stack structure; and

supplying a sealing resin to fill gaps between the semiconductor chips while heating the chip stack structure.

16. The method according to claim 15, wherein heating the chip stack structure comprises:

sandwiching the chip stack structure between first and second heaters.

17. The method according to claim 16, further comprising:

disposing a first sheet between the lowermost one of the plurality of semiconductor chips of the chip stack structure and the first heater before heating the chip stack structure, and

disposing a second sheet between the uppermost one of the plurality of semiconductor chips of the chip stack structure and the second heater before heating the chip stack structure.

18. The method according to claim 15, further comprising:

heating up the chip stack structure after applying the sealing resin to harden the sealing resin.

19. The method according to claim 15, further comprising:

mounting the chip stack structure on a wiring board after applying the sealing resin.

20. The method according to claim 15, wherein stacking the plurality of semiconductor chips comprises:

stacking the plurality of the semiconductor chips on a wiring board to form the chip structure on the wiring board.