Conductive oxynitride and method for manufacturing conductive oxynitride film

• US 8,378,393 B2
• Filed: 10/30/2009
• Issued: 02/19/2013
• Est. Priority Date: 10/31/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sakata, Junichiro, Maruyama, Tetsunori, Imoto, Yuki, Asano, Yuji, Koezuka, Junichi
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): PATTON, PAUL E
• Application Number:
  US12/609,032
• Publication Number:
  US 20100109058A1
• Time in Patent Office: 1,208 Days
• Field of Search: 257/288
• US Class Current: 257/288
• CPC Class Codes: C04B 2235/3284 Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
• CPC Class Codes: C04B 2235/3286 Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
• CPC Class Codes: C04B 35/58 based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides containing free binder metal C22C29/00
• CPC Class Codes: C23C 14/0057 using reactive gases other than O2, H2O, N2, NH3 or CH4
• CPC Class Codes: C23C 14/0676 Oxynitrides
• CPC Class Codes: C23C 14/5846 Reactive treatment
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.

Claims

1. A display device comprising:

a pixel electrode,

wherein the pixel electrode comprises a conductive oxynitride containing indium, gallium, zinc, and hydrogen atoms.

2. The display device according to claim 1,

wherein in the conductive oxynitride, composition ratios of nitrogen (N) to oxygen (O) (N/O) range from 5 atomic % to 80 atomic %.

9. The display device according to claim 1,

wherein the display device is a liquid crystal display device.

12. The display device according to claim 1,

wherein the display device is an electroluminescent display device.

15. The display device according to claim 1,

wherein the conductive oxynitride has an amorphous structure.

3. A method for manufacturing a conductive oxynitride film, comprising:

stacking an oxynitride film containing indium, gallium, and zinc over a film serving as a supply source of hydrogen atoms; and

performing heat treatment so that hydrogen atoms are diffused into the oxynitride film.

5. The method for manufacturing a conductive oxynitride film, according to claim 3,

wherein the oxynitride film containing at least indium, gallium, and zinc is deposited by sputtering a target made from an oxide containing indium, gallium, and zinc in an atmosphere containing a nitrogen gas.

16. The method for manufacturing a conductive oxynitride film according to claim 3,

wherein the conductive oxynitride film has an amorphous structure.

4. A method for manufacturing a conductive oxynitride film, comprising:

stacking an oxynitride film containing indium, gallium, and zinc over a film comprising a hydroxyl group such as a —

SiOH group or a —

AlOH group or over a film to which hydrogen is added; and

performing heat treatment so that hydrogen atoms are diffused into the oxynitride film.

6. The method for manufacturing a conductive oxynitride film, according to claim 4,

wherein the oxynitride film containing at least indium, gallium, and zinc is deposited by sputtering a target made from an oxide containing indium, gallium, and zinc in an atmosphere containing a nitrogen gas.

17. The method for manufacturing a conductive oxynitride film according to claim 4,

wherein the conductive oxynitride film has an amorphous structure.

7. A display device comprising:

a transistor over a substrate;

a channel formation layer included in the transistor; and

a pixel electrode,

wherein the pixel electrode comprises a conductive oxynitride containing indium, gallium, gallium, zinc, and hydrogen atoms, and

wherein the pixel electrode is electrically connected to the transistor.

10. The display device according to claim 7,

wherein the display device is a liquid crystal display device.

13. The display device according to claim 7,

wherein the display device is an electroluminescent display device.

18. The display device according to claim 7,

wherein the conductive oxynitride has an amorphous structure.

20. The display device according to claim 7,

wherein the channel formation layer comprises silicon.

22. The display device according to claim 7,

wherein the channel formation layer comprises an oxide semiconductor.

24. The display device according to claim 7,

wherein the channel formation layer comprises an oxide semiconductor containing indium.

8. A display device comprising:

a transistor over a substrate;

a channel formation layer included in the transistor;

a pixel electrode; and

a counter electrode over the substrate, the transistor, and the pixel electrode,

wherein the counter electrode comprises a conductive oxynitride containing indium, gallium, zinc, and hydrogen atoms.

11. The display device according to claim 8,

wherein the display device is a liquid crystal display device.

14. The display device according to claim 8,

wherein the display device is an electroluminescent display device.

19. The display device according to claim 8,

wherein the conductive oxynitride has an amorphous structure.

21. The display device according to claim 8,

wherein the channel formation layer comprises silicon.

23. The display device according to claim 8,

wherein the channel formation layer comprises an oxide semiconductor.

25. The display device according to claim 8,

wherein the channel formation layer comprises an oxide semiconductor containing indium.