Solid state imaging apparatus, method for driving the same and camera using the same

DC
  • US 8,378,401 B2
  • Filed: 12/22/2011
  • Issued: 02/19/2013
  • Est. Priority Date: 02/13/2003
  • Status: Active Grant
First Claim
Patent Images

1. A solid state imaging apparatus comprising:

  • a plurality of photodiodes arranged in an array;

    a plurality of floating diffusion sections each being connected to ones of the plurality of photodiodes via each of a plurality of transfer transistors;

    a plurality of read-out lines each being selectively connected to at least two of the plurality of transfer transistors;

    a plurality of reset transistors each being connected to one of the plurality of floating diffusion sections;

    a plurality of pixel amplifier transistors each detecting and outputting the potential of one of the plurality of floating diffusion sections;

    a plurality of signal lines each transferring an output from one of the plurality of pixel amplifier transistors,wherein the plurality of photodiodes include a first photodiode, a second photodiode, a third photodiode and a fourth photodiode,the plurality of transfer transistors include a first transfer transistor, a second transfer transistor, a third transfer transistor and a fourth transfer transistor,the plurality of read-out lines include a first read-out line, a second read-out line, a third read-out line and a fourth read-out line,the first read-out line is adjacent to the second read-out line,the second read-out line is disposed between the first read-out line and the third read-out line,the third read-out line is disposed between the second read-out line and the fourth read-out line,the first read-out line is connected to the first photodiode in row m via the first transfer transistor, where m is a positive integer,the second read-out line is connected to the second photodiode in the row m via the second transfer transistor,the third read-out line is connected to the third photodiode in row m+1 via the third transfer transistor,the fourth read-out line is connected to the fourth photodiode in the row m+1 via the fourth transfer transistors,the first photodiode and the third photodiode are disposed in one of column n and column n+1, where n is a positive integer,the second photodiode and the fourth photodiode are disposed in the other of the column n and the column n+1, andone of the column n and the column n+1 is disposed between one of the plurality of signal lines and the other of the column n and the column n+1.

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