Apparatus for restricting moisture ingress

• US 8,389,331 B2
• Filed: 08/24/2012
• Issued: 03/05/2013
• Est. Priority Date: 06/10/2009
• Status: Active Grant

• Current Assignee: Medtronic Incorporated (Medtronic Plc)
• Original Assignee: Medtronic Incorporated (Medtronic Plc)
• Inventors: Mueller, Tyler, Batchelder, Geoffrey, Danzl, Ralph B., Gerrish, Paul F., Malin, Anna J., Marrott, Trevor D., Mattes, Michael F.
• Primary Examiner(s): Graybill, David E
• Application Number:
  US13/593,549
• Publication Number:
  US 20120311855A1
• Time in Patent Office: 193 Days
• Field of Search: None
• US Class Current: 438/109
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05541 Structure
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/0556 Disposition
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/80895 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
• CPC Class Codes: H01L 2224/80896 between electrically insulating surfaces, e.g. oxide or nitride layers
• CPC Class Codes: H01L 2224/80986 Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
• CPC Class Codes: H01L 2224/818 Bonding techniques
• CPC Class Codes: H01L 2224/81894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 2224/83894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/3185 the coating covering also the sidewalls of the semiconductor body
• CPC Class Codes: H01L 23/564 Details not otherwise provided for, e.g. protection against moisture getters H01L23/26
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/80 Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H05K 1/0298 : Multilayer circuits
• CPC Class Codes: H05K 1/11 : Printed elements for providing electric connections to or between printed circuits
• CPC Class Codes: H05K 1/144 : Stacked arrangements of planar printed circuit boards
• CPC Class Codes: H05K 2201/041 : Stacked PCBs, i.e. having neither an empty space nor mounted components in between
• CPC Class Codes: Y10T 29/49117 : Conductor or circuit manufacturing
• CPC Class Codes: Y10T 29/49147 : Assembling terminal to base

Abstract

Apparatus and methods to protect circuitry from moisture ingress, e.g., using a metallic structure as part of a moisture ingress barrier.

Claims

1. A method of providing at least one electrical circuit apparatus comprising a moisture ingress barrier, wherein the method comprises:

providing a first portion, wherein the first portion comprises a substantially planar connection surface, wherein providing the first portion comprises;

providing a wafer substrate, and

providing one or more layers formed on the substrate said connection surface being defined at least partially by the one or more layers, wherein the one or more layers comprise;

at least one circuit device comprising electrical circuitry, wherein a perimeter region is defined laterally surrounding the at least one circuit device, and

at least one metallic structure laterally surrounding the at least one circuit device, wherein the at least one metallic structure extends from the substrate to the connection surface and is located within the perimeter region; and

providing a second portion, wherein the second portion comprises a substantially planar connection surface, wherein providing the second portion comprises providing a wafer substrate; and

coupling the connection surface of the first portion to the connection surface of the second portion to form at least one hermetic interface proximate the at least one metallic structure of the first portion, wherein the at least one hermetic interface forms at least part of the moisture ingress barrier of the at least one electrical circuit apparatus.

2. The method of claim 1, wherein the substrate of the first portion and the substrate of the second portion comprise semiconductor substrates.

3. The method of claim 1, wherein providing the second portion further comprises providing at least one metallic region located at the connection surface of the second portion, and wherein coupling the connection surface of the first portion to the connection surface of the second portion to form the at least one hermetic interface comprises bonding the at least one metallic structure of the first portion to the at least one metallic region of the second portion to form at least a part of the at least one hermetic interface.

4. The method of claim 1, wherein coupling the connection surface of the first portion to the connection surface of the second portion to form the at least one hermetic interface comprises covalently bonding at least one region of the first portion adjacent the at least one metallic structure to at least one region of the second portion to form the at least a part of the at least one hermetic interface.

5. The method of claim 1, wherein providing the first portion further comprises providing at least one electrical interconnect formed in the one or more layers of the first portion and extending from the at least one circuit device to a location within the perimeter region, wherein the at least one electrical interconnect passes through one or more insulated locations of the at least one metallic structure.

6. The method of claim 1, wherein providing the second portion further comprises:

providing one or more layers formed on the substrate terminating at the connection surface, wherein the one or more layers comprise;

at least one circuit device comprising electrical circuitry, wherein a perimeter region is defined laterally surrounding each of the at least one circuit device, and

at least one metallic structure laterally surrounding the at least one circuit device and forming at least part of the moisture ingress barrier of the at least one electrical circuit apparatus, wherein the at least one metallic structure extends from the substrate to the connection surface and is located within the perimeter region, and

wherein coupling the connection surface of the first portion to the connection surface of the second portion comprises metallically bonding the at least one metallic structure of the first portion to the metallic structure of the second portion to form at least part of the hermetic interface.

7. A method of providing an electrical circuit apparatus in an implantable medical device, wherein the electrical circuit apparatus comprises a moisture ingress barrier, and further wherein the method comprises:

providing a first portion comprising;

a substrate, and

one or more layers formed on the substrate, at least part of said one or more layers defining the connection surface, wherein the one or more layers comprise;

at least one circuit device comprising electrical circuitry, wherein a perimeter region is defined laterally surrounding the at least one circuit device, and

at least one metallic structure enclosing the at least one circuit device, wherein the metallic structure extends from the substrate to the substantially planar connection surface and is located within the perimeter region; and

providing a second portion comprising a substantially planar connection surface, wherein providing the second portion comprises providing a substrate; and

bonding the connection surface of the first portion to the connection surface of the second portion to form a hermetic interface proximate the metallic structure of the first portion, wherein the hermetic interface forms at least a part of the moisture ingress barrier.

8. The method of claim 7, wherein the substrate of the first portion and the substrate of the second portion comprise semiconductor substrates.

9. The method of claim 7, wherein the providing the second portion comprises providing a metallic region located at the connection surface, wherein the at least one metallic structure laterally surrounds the at least one circuit device, and further wherein bonding the connection surface of the first portion to the connection surface of the second portion comprises metallically bonding the metallic structure of the first portion to the metallic region of the second portion to form at least part of the hermetic interface.

10. The method of claim 7, wherein the at least one metallic structure laterally surrounds the at least one circuit device, and further wherein bonding the connection surface of the first portion to the connection surface of the second portion comprises covalently bonding a region of the first portion adjacent the metallic structure to a region of the second portion to form at least part of the hermetic interface.

11. A method of providing an electrical circuit apparatus in an implantable medical device, wherein the electrical circuit apparatus comprises a moisture ingress barrier, and further wherein the method comprises:

providing a first portion comprising;

a substrate, and

one or more layers formed on the substrate terminating at a substantially planar connection surface, wherein the one or more layers comprise;

at least one circuit device comprising electrical circuitry, wherein a perimeter region is defined laterally surrounding the at least one circuit device, and

at least one metallic structure laterally surrounding the at least one circuit device, wherein the metallic structure extends from the substrate to the substantially planar connection surface and is located within the perimeter region; and

providing a second portion comprising;

a substrate, and

one or more layers formed on the substrate terminating at a substantially planar connection surface, wherein the one or more layers comprise;

at least one circuit device comprising electrical circuitry, wherein a perimeter region is defined laterally surrounding the at least one circuit device, and

at least one metallic structure laterally of the at least one circuit device and forming at least part of the moisture ingress barrier, wherein the metallic structure extends from the substrate to the substantially planar connection surface and is located within the perimeter region; and

bonding the connection surface of the first portion to the connection surface of the second portion to form a hermetic interface proximate the metallic structures of the first and second portions, wherein the hermetic interface forms at least a part of the moisture ingress barrier.

12. The method of claim 11, wherein the at least one metallic structure of the first portion laterally surrounds the at least one circuit device thereof, wherein the at least one metallic structure of the second portion laterally surrounds the at least one circuit device thereof, and further wherein bonding the connection surface of the first portion to the connection surface of the second portion comprises metallically bonding the metallic structure of the first portion to the metallic structure of the second portion to form at least part of the hermetic interface.

13. A method of providing an electrical circuit apparatus in an implantable medical device, wherein the method comprises:

providing a first portion comprising;

a substrate,

one or more layers formed on the substrate, wherein the connection surface is defined at least partially by the one or more layers, and

at least one circuit device comprising electrical circuitry, wherein a perimeter region laterally surrounds the at least one circuit device; and

providing a second portion comprising a substantially planar connection surface, wherein providing the second portion comprises providing a substrate; and

bonding the connection surface of the first portion to the connection surface of the second portion to provide a moisture ingress barrier, wherein the moisture ingress barrier comprises at least one metallic structure adjacent at least a portion of least one circuit device extending from the substrate of the first portion to the connection surface of the first portion and a hermetic interface proximate the metallic structure of the first portion formed upon bonding the connection surface of the first portion to the connection surface of the second portion.

14. The method of claim 13, wherein the substrate of the first portion and the substrate of the second portion comprise semiconductor substrates.

15. The method of claim 13, wherein providing the second portion comprises providing a metallic region located at the connection surface, and further wherein bonding the connection surface of the first portion to the connection surface of the second portion comprises metallically bonding the metallic structure of the first portion to the metallic region of the second portion to form at least part of the hermetic interface.

16. The method of claim 13, wherein bonding the connection surface of the first portion to the connection surface of the second portion comprises covalently bonding a region of the first portion adjacent the metallic structure to a region of the second portion to form at least part of the hermetic interface.

17. A method of providing at least one electrical circuit apparatus in an implantable medical device, the at least one electrical circuit apparatus comprising a moisture ingress barrier, wherein the method comprises:

providing a first portion, wherein the first portion comprises a substantially planar connection surface, wherein providing the first portion comprises;

providing a wafer substrate, and

providing one or more layers formed on the substrate said connection surface being defined at least partially by the one or more layers, wherein the one or more layers comprise;

at least one circuit device comprising electrical circuitry, wherein a perimeter region is defined laterally surrounding the at least one circuit device,

at least one metallic structure laterally surrounding at least a portion of the at least one circuit device, wherein the at least one metallic structure extends from the substrate to the connection surface and is located within the perimeter region, and

at least one electrical interconnect formed in the one or more layers of the first portion and extending from the at least one circuit device to a location within the perimeter region, wherein the at least one electrical interconnect passes through one or more insulated locations of the at least one metallic structure; and

providing a second portion, wherein the second portion comprises a substantially planar connection surface, wherein providing the second portion comprises providing a wafer substrate, and further wherein one or more interconnect vias are formed in at least one of the first portion and the second portion and terminate at one or more surface contacts at a surface of at least one of the first and second portions, wherein the at least one electrical interconnect of the first portion connects to the one or more interconnect vias; and

coupling the connection surface of the first portion to the connection surface of the second portion to form at least one hermetic interface proximate the at least one metallic structure of the first portion, wherein the at least one hermetic interface forms at least part of the moisture ingress barrier of the at least one electrical circuit apparatus.

18. The method of claim 17, wherein providing the second portion further comprises providing at least one metallic region located at the connection surface of the second portion, and wherein coupling the connection surface of the first portion to the connection surface of the second portion to form the at least one hermetic interface comprises metallically bonding the at least one metallic structure of the first portion to the at least one metallic region of the second portion to form at least a part of the at least one hermetic interface.

19. The method of claim 17, wherein coupling the connection surface of the first portion to the connection surface of the second portion to form the at least one hermetic interface comprises covalently bonding at least one region of the first portion adjacent the at least one metallic structure to at least one region of the second portion to form the at least a part of the at least one hermetic interface.

20. The method of claim 17, wherein providing the second portion further comprises:

providing one or more layers formed on the substrate terminating at the connection surface, wherein the one or more layers comprise;

at least one circuit device comprising electrical circuitry, wherein a perimeter region is defined laterally surrounding each of the at least one circuit device, and

at least one metallic structure formed adjacent at least a portion of the at least one circuit device and forming at least part of the moisture ingress barrier of the at least one electrical circuit apparatus, wherein the at least one metallic structure extends from the substrate to the connection surface and is located within the perimeter region, and

wherein coupling the connection surface of the first portion to the connection surface of the second portion comprises metallically bonding the at least one metallic structure of the first portion to the metallic structure of the second portion to form at least part of the hermetic interface.