Methods for characterizing the behavior of microelectromechanical system devices

• US 8,395,371 B2
• Filed: 09/30/2008
• Issued: 03/12/2013
• Est. Priority Date: 02/11/2008
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Govil, Alok
• Primary Examiner(s): PATIDAR, JAY M
• Application Number:
  US12/242,790
• Publication Number:
  US 20090201009A1
• Time in Patent Office: 1,624 Days
• Field of Search: 324/252, 324/244, 324/260, 324/76.39, 324/713
• US Class Current: 324/76.39
• CPC Class Codes: G01R 31/2637 for testing other individual devices G01R31/2608 - G01R31/2632, G01R31/27 take precedence
• CPC Class Codes: G09G 2320/0693 Calibration of display systems
• CPC Class Codes: G09G 3/006 Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays testing individual LED's G01R31/2635; testing lamps G01R31/44; testing of optical features of LCD displays G02F1/1309
• CPC Class Codes: G09G 3/3466 based on interferometric effect

Abstract

Various methods are described to characterize interferometric modulators or similar devices. Measured voltages across interferometric modulators may be used to characterize transition voltages of the interferometric modulators. Measured currents may be analyzed by integration of measured current to provide an indication of a dynamic response of the interferometric modulator. Frequency analysis may be used to provide an indication of a hysteresis window of the interferometric modulator or mechanical properties of the interferometric modulator. Capacitance may be determined through signal correlation, and spread-spectrum analysis may be used to minimize the effect of noise or interference on measurements of various interferometric modulator parameters.

Claims

1. A method of characterizing the behavior of a microelectromechanical system (MEMS) device, the method comprising:

applying a first sinusoidal voltage signal to the MEMS device, wherein the MEMS device comprises a movable electrode spaced apart from another electrode;

measuring an output signal, wherein the output signal comprises current through the MEMS device during application of the first sinusoidal voltage signal to the MEMS device;

identifying frequency components of the output signal;

determining whether the frequency components of the output signal are indicative of non-linear behavior of the MEMS device; and

identifying a transition voltage of the MEMS device based upon the presence of non-linear behavior, wherein identifying a transition voltage of the MEMS device comprises applying at least a second sinusoidal voltage signal to the MEMS device, wherein the second sinusoidal voltage spans a voltage range different from the voltage range of the first sinusoidal voltage.

2. A method of characterizing the behavior of a microelectromechanical system (MEMS) device, the method comprising:

applying a first sinusoidal voltage signal to the MEMS device, wherein the MEMS device comprises a movable electrode spaced apart from another electrode;

applying a second sinusoidal voltage signal to the MEMS device, wherein the second sinusoidal voltage spans a voltage range different from the voltage range of the first sinusoidal voltage

measuring an output signal, wherein the output signal comprises current through the MEMS device during application of at least one of the first sinusoidal voltage signal or the second sinusoidal voltage signal to the MEMS device;

identifying frequency components of the output signal; and

determining whether the frequency components of the output signal are indicative of non-linear behavior of the MEMS device.

3. The method of claim 2, additionally comprising identifying a transition voltage of the MEMS device.

4. A method of characterizing the behavior of a microelectromechanical system (MEMS) device, the method comprising:

applying a first sinusoidal voltage signal to the MEMS device, wherein the MEMS device comprises a movable electrode spaced apart from another electrode;

measuring an output signal, wherein the output signal comprises current through the MEMS device during application of the first sinusoidal voltage signal to the MEMS device;

identifying frequency components of the output signal; and

determining whether the range of the sinusoidal voltage signal comprises a transition voltage based upon the frequency components of the measured output signal in response to the application of said sinusoidal voltage signal.

5. The method of claim 4, wherein the output signal includes current through the MEMS device.

6. The method of claim 4, additionally comprising applying at least a second sinusoidal voltage signal to the MEMS device, wherein the second sinusoidal voltage spans a voltage range different from the voltage range of the first sinusoidal voltage.

7. The method of claim 4, wherein identifying the frequency components of the output signal comprises performing a Fourier transform of the output signal.

8. The method of claim 4, wherein the MEMS device includes an interferometric modulator.