Plasma CVD apparatus, method for forming thin film and semiconductor device

• US 8,404,314 B2
• Filed: 03/23/2007
• Issued: 03/26/2013
• Est. Priority Date: 03/29/2006
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Kumada, Teruhiko, Nobutoki, Hideharu, Yasuda, Naoki
• Primary Examiner(s): MILLER, JR, JOSEPH ALBERT
• Application Number:
  US12/294,645
• Publication Number:
  US 20100164072A1
• Time in Patent Office: 2,195 Days
• Field of Search: None
• US Class Current: 427/570
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/342 Boron nitride
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01L 21/02112 characterised by the material of the layer
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/318 composed of nitrides

Abstract

A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.

Claims

1. A thin-film forming method comprising:

introducing a compound having a borazine skeleton into a portion above a substrate placed inside a reaction chamber;

applying a negative charge to a feeding electrode that supports said substrate placed inside said reaction chamber;

generating a plasma inside said reaction chamber by generating a high frequency energy using a plasma generator arranged opposite to said feeding electrode via said substrate so that at the portion above said substrate said compound is brought into a reaction active state with the borazine skeleton being maintained therein; and

selectively sweeping cations out of the active components of said compound in said reaction active state onto said substrate by said negative charge applied to said feeding electrode and successively bonding the borazine skeletons of said cations to a film on said substrate and polymerizing the borazine skeletons to be deposited on said substrate,

wherein said compound having a borazine skeleton is indicated by the following Formula (1);

2. The thin-film forming method according to claim 1, further comprising:

heating and crosslinking a film formed of the polymerized the borazine skeletons to be deposited on said substrate.

3. The thin-film forming method according to claim 1, wherein the film on said substrate is activated by plasma induction using a high frequency power supply connected to said feeding electrode, and the borazine skeleton brought into the reaction active state above said substrate is successively bonded to the film activated by said plasma induction and polymerized.