On-track process for patterning hardmask by multiple dark field exposures

• US 8,415,083 B2
• Filed: 05/24/2011
• Issued: 04/09/2013
• Est. Priority Date: 01/29/2008
• Status: Active Grant

• Current Assignee: Brewer Science Inc.
• Original Assignee: Brewer Science Inc.
• Inventors: Sun, Sam X., Xu, Hao, Flaim, Tony D.
• Primary Examiner(s): Lee, Sin J.
• Application Number:
  US13/114,612
• Publication Number:
  US 20110223524A1
• Time in Patent Office: 686 Days
• Field of Search: None
• US Class Current: 430/270.1
• CPC Class Codes: G03F 7/0035 Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
• CPC Class Codes: G03F 7/0752 in non photosensitive layers or as additives, e.g. for dry lithography
• CPC Class Codes: G03F 7/0758 with silicon- containing groups in the side chains
• CPC Class Codes: G03F 7/095 having more than one photosensitive layer G03F7/075 takes precedence
• CPC Class Codes: G03F 7/322 Aqueous alkaline compositions
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/0271 comprising organic layers
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/0338 Process specially adapted to improve the resolution of the mask
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C

Abstract

This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process.

Claims

1. A hardmask composition comprising a polymer and a vinyl ether crosslinking agent dispersed or dissolved in a solvent system, said polymer comprising recurring monomers of

2. The composition of claim 1, wherein the ratio of monomer (I) to monomer (II) is from about 0.2:

0.8 to about 0.8;

0.2, where R₂, of monomer (I) is a silicon-containing moiety.

3. The composition of claim 1, said composition comprising from about 1% to about 20% by weight polymer, based upon the total weight of the composition taken as 100% by weight.

4. The composition of claim 1, further comprising an ingredient selected from the group consisting of catalysts, light attenuating moieties, surfactants, adhesion promoters, antioxidants, photoinitiators, and combinations of the foregoing.

5. A structure comprising:

a substrate having a surface;

a hardmask layer adjacent said surface, said hardmask layer being formed from a hardmask composition comprising a polymer dispersed or dissolved in a solvent system, said polymer comprising recurring monomers of

6. The structure of claim 5, wherein said hardmask layer is photosensitive.

7. The structure of claim 5, wherein said hardmask layer is insoluble in aqueous alkaline developer selected from the group consisting of TMAH and KOH.

8. The structure of claim 5, wherein said hardmask layer is comprised of a pattern.

9. The structure of claim 8, wherein said pattern is selected from the group consisting of vias and trenches.

10. The structure of claim 8, wherein said hardmask layer is substantially insoluble in organic solvents selected from the group consisting of ethyl lactate, propylene glycol methyl ether acetate, propylene glycol methyl ether, propylene glycol n-propyl ether, cyclohexanone, acetone, Gamma butyrolactone, and mixtures thereof.

11. The structure of claim 5, wherein said substrate is selected from the group consisting of silicon, SiGe, SiO₂, Si₃N₄, aluminum, tungsten, tungsten silicide, gallium arsenide, germanium, tantalum, tantalum nitride, coral, black diamond, phosphorous or boron doped glass, and mixtures of the foregoing.