Semiconductor material doping based on target valence band discontinuity

• US 8,426,225 B2
• Filed: 12/04/2010
• Issued: 04/23/2013
• Est. Priority Date: 12/04/2009
• Status: Active Grant

• Current Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Inventors: Shatalov, Maxim S., Gaska, Remigijus, Yang, Jinwei, Shur, Michael
• Primary Examiner(s): DANG, PHUC T
• Application Number:
  US12/960,476
• Publication Number:
  US 20110138341A1
• Time in Patent Office: 871 Days
• Field of Search: 438/22, 438/37, 257/13, 257/15, 257/E33.005
• US Class Current: 438/22
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 29/122 Single quantum well structures single heterojunctions, couples of materials H01L29/165, H01L29/205, H01L29/225, H01L29/267
• CPC Class Codes: H01L 29/155 Comprising only semiconductor materials H01L29/154 takes precedence
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/201 including two or more compounds , e.g. alloys H01L29/2006 takes precedence
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.

Claims

1. A method of fabricating a structure, the method comprising:

selecting a target valence band discontinuity between a quantum well and an adjacent barrier in the structure, wherein a dopant energy level of a dopant in the adjacent barrier coincides with at least one of;

a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well; and

forming the quantum well and the adjacent barrier in the structure having an actual valence band discontinuity corresponding to the target valence band discontinuity, wherein the forming includes doping the quantum well and the adjacent barrier with the dopant.

2. The method of claim 1, wherein the forming further includes adjusting a molar fraction of at least one element in each of the quantum well and the adjacent barrier according to the target valence band discontinuity.

3. The method of claim 2, wherein each of the quantum well and the adjacent barrier comprises a group III nitride layer, and wherein the molar fraction of at least one group III element in the group III nitride layer is adjusted according to the target valence band discontinuity.

4. The method of claim 1, wherein the forming includes limiting a thickness of each of the quantum well and the adjacent barrier equal to or less than an estimated characteristic size of an impurity wave function.

5. The method of claim 4, wherein the dopant comprises a shallow impurity, the method further comprising estimating the characteristic size of the impurity wave function using the Bohr radius constant.

6. The method of claim 4, wherein the dopant comprises a deep impurity, and wherein the thickness of each of the quantum well and the adjacent barrier is in a range between a single monolayer and the Bohr radius constant.

7. The method of claim 1, wherein the valence energy band edge for the quantum well and the dopant energy level are within approximately three thermal energies.

8. The method of claim 1, wherein the selecting and forming are performed as part of fabricating a superlattice layer of the structure.

9. The method of claim 8, wherein the fabricating the superlattice layer of the structure is performed as part of fabricating an ohmic contact of the structure.

10. A method of fabricating a device, the method comprising:

fabricating a structure for the device, the structure including at least one of;

a heterostructure or a superlattice layer comprising a quantum well and an adjacent barrier, the fabricating the structure including;

selecting a target valence band discontinuity between the quantum well and the adjacent barrier, wherein a dopant energy level of a dopant in the adjacent barrier coincides with at least one of;

a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well; and

forming the quantum well and the adjacent barrier in the structure having an actual valence band discontinuity corresponding to the target valence band discontinuity, wherein the forming includes doping the quantum well and the adjacent barrier with the dopant.

11. The method of claim 10, wherein the device is one of:

a light emitting diode, a superluminescent diode, a laser, a photodetector, or a Schottky diode.

12. The method of claim 10, wherein the device is one of:

a heterostructure field effect transistor, a bipolar junction transistor, a switch, or a radio frequency switch.

13. The method of claim 10, wherein the structure comprises one of:

an intermediate layer or a contact layer for the device.

14. The method of claim 10, wherein each of the quantum well and the adjacent barrier comprises a group III nitride layer, and wherein the forming further includes adjusting a molar fraction of at least one group III element in each of the quantum well and the adjacent barrier according to the target valence band discontinuity.

15. The method of claim 14, wherein the at least one group III element is aluminum.

16. A method comprising:

designing at least one of;

a heterostructure or a superlattice layer for a device comprising a quantum well and an adjacent barrier, the designing including;

selecting a target valence band discontinuity between the quantum well and the adjacent barrier, wherein a dopant energy level of a dopant in the adjacent barrier coincides with at least one of;

a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well.

17. The method of claim 16, further comprising fabricating the device, the fabricating including fabricating the structure by forming the quantum well and the adjacent barrier in the structure having an actual valence band discontinuity corresponding to the target valence band discontinuity, wherein the forming includes doping the quantum well and the adjacent barrier with the dopant.

18. The method of claim 17, further comprising fabricating a circuit, wherein the fabricating the circuit includes connecting at least one input and at least one output to the device.

19. The method of claim 18, further comprising operating the circuit.

20. The method of claim 16, further comprising creating a circuit design, wherein the creating includes connecting at least one input and at least one output to the device.