Semiconductor material doping based on target valence band discontinuity

  • US 8,426,225 B2
  • Filed: 12/04/2010
  • Issued: 04/23/2013
  • Est. Priority Date: 12/04/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a structure, the method comprising:

  • selecting a target valence band discontinuity between a quantum well and an adjacent barrier in the structure, wherein a dopant energy level of a dopant in the adjacent barrier coincides with at least one of;

    a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well; and

    forming the quantum well and the adjacent barrier in the structure having an actual valence band discontinuity corresponding to the target valence band discontinuity, wherein the forming includes doping the quantum well and the adjacent barrier with the dopant.

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