RF substrate bias with high power impulse magnetron sputtering (HIPIMS)

• US 8,435,389 B2
• Filed: 12/12/2007
• Issued: 05/07/2013
• Est. Priority Date: 12/12/2006
• Status: Active Grant

• Current Assignee: Evatec AG
• Original Assignee: OC Oerlikon Balzers AG (OC Oerlikon Corporation AG)
• Inventors: Kadlec, Stanislav, Weichart, Jrgen
• Primary Examiner(s): Smith, Nicholas A
• Assistant Examiner(s): BAND, MICHAEL A
• Application Number:
  US11/954,490
• Publication Number:
  US 20080135401A1
• Time in Patent Office: 1,973 Days
• Field of Search: 204/192.12, 204/192.13, 204/298.03, 204/298.08
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/3485 using pulsed power to the target
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: H01J 37/32045 Circuits specially adapted for controlling the glow discharge
• CPC Class Codes: H01J 37/32064 Circuits specially adapted for controlling the arc discharge for plasma torches H01H1/36
• CPC Class Codes: H01J 37/32944 Arc detection
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H01J 37/3444 Associated circuits
• CPC Class Codes: H01J 37/3467 Pulsed operation, e.g. HIPIMS

Abstract

An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm² is provided. The apparatus comprises a power supply that is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

Claims

1. A method for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm² comprising:

operating a power supply to charge the magnetron;

administering a first pulse to the magnetron;

discharging the magnetron according to a bias pulse from a RF electrical bias device operably connected to the substrate; and

synchronizing a frequency and a time delay of the first pulse with the bias pulse using a synchronization device operably connected to the power supply, wherein the bias pulse is administered before the first pulse with the time delay between 0.1 μ

s to 500 μ

s.

2. The method according to claim 1, wherein a duty cycle for the first pulse is between 0.01% and 20%, and the frequency in the range of 1 Hz to 20 kHz.

3. The method according to claim 1, wherein a duty cycle for the first pulse is between 2% and 50%.

4. The method according to claim 1, further comprising:

a matching unit matching a first impedance of a plasma with a second impedance of the substrate, wherein the matching unit is operably connected between RF electrical bias device and a chuck that holds the substrate.

5. The method according to claim 4, further comprising:

a monitoring device monitoring an RF self-bias at the chuck, wherein the monitoring device is operably connected to the chuck that holds the substrate and the chuck is operably connected between the RF electrical bias device and the substrate.