Amorphous multi-component metallic thin films for electronic devices
First Claim
Patent Images
1. An electronic device structure comprising:
- (a) a first metal layer;
(b) a second metal layer; and
(c) at least one insulator layer located between the first metal layer and the second metal layer,wherein at least one of the metal layers comprises an amorphous multi-component metallic film and wherein the amorphous multi-component metallic film is selected from ZrCuAlNi or TiAl.
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Abstract
An electronic structure comprising: (a) a first metal layer; (b) a second metal layer; (c) and at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film. In certain embodiments, the construct is a metal-insulator-metal (MIM) diode.
27 Citations
7 Claims
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1. An electronic device structure comprising:
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(a) a first metal layer; (b) a second metal layer; and (c) at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film and wherein the amorphous multi-component metallic film is selected from ZrCuAlNi or TiAl. - View Dependent Claims (6)
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2. An electronic device structure comprising:
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(a) a first metal layer; (b) a second metal layer; and (c) at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film and wherein the first metal layer comprises an amorphous multi-component metallic film comprising ZrCuAlNi.
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3. An electronic device structure comprising:
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(a) a first metal layer; (b) a second metal layer; and (c) at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film and wherein the first metal layer comprises the amorphous multi-component metallic film and the second metal layer is not an amorphous multi-component metallic film. - View Dependent Claims (4)
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5. An electronic device structure comprising:
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(a) a first metal layer; (b) a second metal layer; and (c) at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film and wherein the first metal layer comprises an amorphous multi-component metallic film comprising TiAl.
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7. A method for making a metal-insulator-metal diode comprising:
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forming a first electrode on a first substrate wherein the first electrode defines a first surface facing the first substrate and an opposing second surface; forming an insulator layer on the second surface of the first electrode, wherein the insulator layer defines a first surface facing the first electrode and an opposing second surface; and forming a second electrode on the second surface of the insulator layer, wherein at least one of the electrodes comprises an amorphous multi-component metallic film and wherein the amorphous multi-component metallic film is selected from ZrCuAlNi or TiAl.
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Specification