×

Method of fabricating epitaxial structures

  • US 8,455,290 B2
  • Filed: 09/04/2010
  • Issued: 06/04/2013
  • Est. Priority Date: 09/04/2010
  • Status: Active Grant
First Claim
Patent Images

1. A method of fabricating epitaxial structures, the method comprising:

  • growing a first etch stop on a first side of a substrate;

    growing at least one epitaxial layer on the first side of the substrate;

    flipping the substrate;

    growing a second etch stop on a second side of the substrate;

    growing at least one epitaxial layer on the second side of the substrate;

    applying a carrier medium to the first and second sides of the substrate;

    dividing the substrate into two parts generally along an epitaxial plane to create a first epitaxial structure and a second epitaxial structure;

    removing residual substrate from the first and second epitaxial structures; and

    removing the first and second etch stops.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×