Batch CVD method and apparatus for semiconductor process

• US 8,461,059 B2
• Filed: 07/19/2010
• Issued: 06/11/2013
• Est. Priority Date: 07/22/2009
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ikeuchi, Toshiyuki, Hasegawa, Masayuki, Takahashi, Toshihiko, Suzuki, Keisuke
• Primary Examiner(s): Loke, Steven
• Assistant Examiner(s): GOODWIN, DAVID J
• Application Number:
  US12/838,911
• Publication Number:
  US 20110021033A1
• Time in Patent Office: 1,058 Days
• Field of Search: 438/778, 438/785, 438/787
• US Class Current: 438/778
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45557 Pulsed pressure or control pressure
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence

Abstract

A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.

Claims

1. A batch CVD (chemical vapor deposition) method for a semiconductor process in a batch CVD apparatus,

the apparatus comprising

a vertically long process container configured to accommodate a plurality of target objects,

a holder configured to support the target objects at intervals in a vertical direction inside the process container,

a source gas supply system configured to supply a source gas into the process container, the source gas supply system including a source gas valve for adjusting supply of the source gas,

a reactive gas supply system configured to supply a reactive gas into the process container, the reactive gas supply system including a reactive gas valve for adjusting supply of the reactive gas, and

an exhaust system including a vacuum pump configured to exhaust gas from inside the process container and an exhaust valve for adjusting an exhaust rate,

the method repeating a cycle a plurality of times to laminate thin films formed by respective times and thereby to form a product film having a predetermined thickness on the target objects, the cycle comprising, while keeping the vacuum pump running entirely through the cycle and using the exhaust valve based on definitions that a totally closed state and a totally open state of the exhaust valve are a valve opening degree of 0 to 2% and a valve opening degree of 90 to 100% thereof, respectively,

an adsorption step of adsorbing the source gas onto the target objects, while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed and without exhausting gas from inside the process container by keeping the exhaust valve in the totally closed state both entirely through the adsorption step;

then, a first intermediate step of removing residual gas from inside the process container, without supplying either of the source gas and the reactive gas into the process container by keeping both of the source gas valve and the reactive gas valve closed, while exhausting gas from inside the process container by setting the exhaust valve in the totally open state;

then, a reaction step of causing the reactive gas to react with the source gas adsorbed on the target objects, without supplying the source gas into the process container by keeping the source gas valve closed entirely through the reaction step, but starting supplying the reactive gas into the process container by setting the reactive gas valve open while exhausting gas from inside the process container by setting the exhaust valve in the totally open state, and then setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state to gradually increase pressure inside the process container while keeping on supplying the reactive gas into the process container and exhausting gas from inside the process container; and

then, a second intermediate step of removing residual gas from inside the process container, without supplying either of the source gas and the reactive gas into the process container by keeping both of the source gas valve and the reactive gas valve closed, while exhausting gas from inside the process container by setting the exhaust valve in the totally open state,

wherein the reaction step first sets the exhaust valve to gradually decrease its valve opening degree from the totally open state to the predetermined open state with a first decreasing rate for a second period, and then sets the exhaust valve to gradually decrease its valve opening degree from the predetermined open state with a second decreasing rate more moderate than the first decreasing rate after the second period.

2. The method according to claim 1, wherein the first and second intermediate steps includes supplying an inactive gas into the process container.

3. The method according to claim 1, wherein the first and second intermediate step excludes supplying any gas into the process container

4. The method according to claim 1, wherein the first period has a length within a range of 1 to 50% of that of the adsorption step.

5. The method according to claim 1, wherein the second period has a length within a range of 1 to 50% of that of the reaction step.

6. The method according to claim 1, wherein the reaction step excludes setting the exhaust valve in the totally closed state.

7. The method according to claim 1, wherein the reaction step excludes setting the reactive gas valve closed.

8. The method according to claim 1, wherein the adsorption step has a time length of 2 to 120 seconds, the reaction step has a time length of 2 to 120 seconds, and each of the first and second intermediate steps has a time length of 2 to 20 seconds.

9. The method according to claim 8, wherein the first period has a time length of 2 to 60 seconds within a range of 1 to 50% of that of the adsorption step.

10. The method according to claim 8, wherein the second period has a time length of 2 to 60 seconds within a range of 1 to 50% of that of the reaction step.

11. The method according to claim 1, wherein the product film is one selected from the group consisting of a silicon oxide film, a silicon oxynitride film, and a silicon nitride film.

12. The method according to claim 11, wherein the source gas comprises a silicon source gas selected from the group consisting of trisdimethylamino silane, bistertialbutylamino silane, tetrakisdimethylamino silane, diisopropylamino silane, dichloro silane, hexachloro disilane, and tetrachloro silane.

13. The method according to claim 11, wherein the reactive gas comprises a gas selected from the group consisting of O₃, O₂, N₂O, NO, and NH₃.

14. The method according to claim 1, wherein the product film is silicon oxide film, the source gas comprises a silicon source gas selected from the group consisting of trisdimethylamino silane, bistertialbutylamino silane, tetrakisdimethylamino silane, and diisopropylamino silane, and the reactive gas comprises a gas mixture of O₃ and O₂.

15. A non-transitory computer readable storage medium containing program instructions for execution on a processor, which, when executed by the processor, control a batch CVD apparatus to perform a method according to claim 1.