Chemically amplified negative resist composition for EB or EUV lithography and patterning process

  • US 8,470,511 B2
  • Filed: 02/15/2011
  • Issued: 06/25/2013
  • Est. Priority Date: 02/16/2010
  • Status: Active Grant
First Claim
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1. A chemically amplified negative resist composition for EB or EUV lithography, comprising (A) an alkali-soluble polymer, (B) an acid generator capable of generating an acid catalyst, and (C) a nitrogen-containing compound as a basic component, said polymer as component (A) turning alkali insoluble under the action of the acid catalyst in the presence or absence of a crosslinker,wherein a basic polymer PB comprising recurring units of the general formulae (1) and (2) and having a weight average molecular weight of 1,000 to 50,000 serves as both components (A) and (C),

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