Resist underlayer film forming composition containing liquid additive

• US 8,481,247 B2
• Filed: 08/20/2007
• Issued: 07/09/2013
• Est. Priority Date: 08/28/2006
• Status: Active Grant

• Current Assignee: Nissan Chemical Industries Limited (Shin-Etsu Chemical Company Limited)
• Original Assignee: Nissan Chemical Industries Limited (Shin-Etsu Chemical Company Limited)
• Inventors: Horiguchi, Yusuke, Shinjo, Tetsuya, Takei, Satoshi
• Primary Examiner(s): Hamilton, Cynthia
• Application Number:
  US12/310,328
• Publication Number:
  US 20090311624A1
• Time in Patent Office: 2,150 Days
• Field of Search: None
• US Class Current: 430/319
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: H01L 21/0271 comprising organic layers
• CPC Class Codes: H01L 21/31144 using masks

Abstract

To provide a resist underlayer film forming composition for lithography that is used in a lithography process for production of a semiconductor device. There is provided a resist underlayer film forming composition used in a lithography process for production of a semiconductor device, comprising a resin (A), a liquid additive (B) and a solvent (C). The liquid additive (B) may be an aliphatic polyether compound. The liquid additive (B) may be a polyether polyol, polyglycidyl ether or a combination thereof. Further, there is provided a method of manufacturing a semiconductor device, including the steps of forming a resist underlayer film by applying the resist underlayer film forming composition on a semiconductor substrate and by calcining the composition; forming a photoresist layer on the underlayer film; exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and developing the photoresist layer after the exposure to light.

Claims

1. A resist underlayer film forming composition comprising:

a resin (A);

a liquid additive (B) being liquid at a temperature from 20°

C. to about 270°

C.; and

a solvent (C),

wherein

the resin (A) is a compound having a protected carboxyl group and a compound having a group reactable with a carboxyl group, or a compound having a protected carboxyl group and a group reactable with a carboxyl group, and

the liquid additive (B) is a polyether polyol represented by Formula (1);

2. The resist underlayer film forming composition according to claim 1, further comprising a light absorbing compound (D).

3. A method of forming a resist underlayer film used in a lithography process for production of a semiconductor device, the method comprising:

applying the resist underlayer film forming composition according to claim 1 on a substrate and

subjecting the composition to a temperature from 80°

C. to 250°

C.

4. A method of manufacturing a semiconductor device, the method comprising:

forming a resist underlayer film by applying the resist underlayer film forming composition according to claim 1 on a semiconductor substrate and by subjecting the composition to a temperature from 80°

C. to 250°

C.;

forming a photoresist layer on the underlayer film;

exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and

developing the photoresist layer after the exposure to light.

5. A method of manufacturing a semiconductor device, the method comprising:

forming a resist underlayer film by applying a resist underlayer film forming composition on a semiconductor substrate and by subjecting the composition to a temperature from 80°

C. to 250°

C.;

forming a photoresist layer on the underlayer film;

exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and

developing the photoresist layer after the exposure to light,

wherein

the resist underlayer film forming composition comprises;

a resin (A);

a liquid additive (B) being liquid at a temperature from 20°

C. to about 270°

C.; and

a solvent (C), and

the liquid additive (B) comprises a polyether polyol represented by Formula (1);