Light-emitting device and method for manufacturing light-emitting device

• US 8,486,731 B2
• Filed: 08/11/2011
• Issued: 07/16/2013
• Est. Priority Date: 08/25/2010
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Yamaguchi, Shinji, YOSHIZUMI, Nobuyuki
• Primary Examiner(s): Chambliss, Alonzo
• Application Number:
  US13/207,752
• Publication Number:
  US 20120049222A1
• Time in Patent Office: 705 Days
• Field of Search: None
• US Class Current: 438/25
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

A light-emitting device includes: a substrate; a light-emitting section provided on an upper surface of the substrate, the light-emitting section including an LED chip and a sealing resin containing fluorescent material covering the LED chip; and a silicon oxide insulating film provided between the substrate and the light-emitting section, the silicon oxide insulating film being formed directly on an upper surface of the substrate or an alumina insulating film, the sealing resin containing fluorescent material formed directly on an upper surface of the silicon oxide insulating film so as to cover the LED chip. Thus, this invention provides the light-emitting device capable of making the sealing resin difficult to be separated from the substrate and a method for manufacturing the light-emitting device.

Claims

1. A method for manufacturing a light-emitting device including a substrate and at least one light-emitting section provided on an upper surface of the substrate, the at least one light-emitting section including at least one light-emitting element and a first sealing resin covering the at least one light-emitting element, said method comprising the steps of:

forming a silicon oxide insulating film directly on at least an area of the upper surface of the substrate in which area the at least one light-emitting section is to be provided, the upper surface having a wiring pattern;

forming a water-repellent film on the upper surface of the substrate so as to cover the silicon oxide insulating film;

forming an opening in the water-repellent film, for exposing, through the opening, the silicon oxide insulating film formed on the area in which the at least one light-emitting section is to be provided;

providing the at least one light-emitting element on the silicon oxide insulating film within the opening; and

forming the first sealing resin by injecting a liquid resin into the opening so as to cover the at least one light-emitting element and curing the liquid resin.

2. The method for manufacturing the light-emitting device according to claim 1, further comprising the steps of, after the step of forming the first sealing resin:

removing the water-repellent film; and

forming a second sealing resin directly on an upper surface of the silicon oxide insulating film so as to cover the first sealing resin.

3. A method for manufacturing a light-emitting device including a substrate and at least one light-emitting section provided on an upper surface of the substrate, the at least one light-emitting section including at least one light-emitting element and a first sealing resin covering the at least one light-emitting element, said method comprising the steps of:

forming an alumina insulating film directly on a whole area of the upper surface of the substrate, the upper surface having a wiring pattern;

forming a silicon oxide insulating film directly on at least an area of an upper surface of the alumina insulating film in which area the at least one light-emitting section is to be provided;

forming a water-repellent film on the upper surface of the alumina insulating film so as to cover the silicon oxide insulating film;

forming an opening in the water-repellent film, for exposing, through the opening, the silicon oxide insulating film formed on the area in which the at least one light-emitting section is to be provided;

providing the at least one light-emitting element on the silicon oxide insulating film within the opening; and

forming the first sealing resin by injecting a liquid resin into the opening so as to cover the at least one light-emitting element and curing the liquid resin.

4. The method for manufacturing the light-emitting device according to claim 3, further comprising the steps of, after the step of forming the first sealing resin:

removing the water-repellent film; and

forming a second sealing resin directly on an upper surface of the silicon oxide insulating film so as to cover the first sealing resin.